BT258S-800LT,118 WeEn Semiconductor

BT258S-800LT SCR logic level, high temperature 19 March 2014 Product data sheet 1. General description Passivated sensitive gate Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Direct interfacing with low power drivers and microcontrollers High bidirectional blocking voltage capability High junction operating temperature capability High thermal cycling performance Planar passivated for voltage ruggedness and reliability Surface mountable package Very sensitive gate for logic level controls 3. Applications General purpose switching and phase control Ignition circuits, CDI for 2- and 3-wheelers Motor control - e.g. small kitchen appliances Protection circuits for Switched-Mode Power Supplies (SMPS) Protection circuits in lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage V repetitive peak reverse - - 800 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 75 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p T junction temperature 1 - - 150 C j I RMS on-state current half sine wave T 135 C Fig. 2 - - 8 A T(RMS) mb Fig. 3 Scan or click this QR code to view the latest information for this product DPAKNXP Semiconductors BT258S-800LT SCR logic level, high temperature Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 8 20 - 50 A GT D T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 150 C R = 100 35 70 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 13 1 Operation above junction temperatures of 110 C may require the use of a gate to cathode resistor of 1 k or less. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb A K 1 K cathode G 2 A anode sym037 3 G gate mb A mounting base connected to 2 anode 1 3 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT258S-800LT DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state voltage - 800 V DRM V repetitive peak reverse voltage - 800 V RRM I average on-state current half sine wave T 135 C Fig. 1 - 5 A T(AV) mb I RMS on-state current half sine wave T 135 C Fig. 2 - 8 A T(RMS) mb Fig. 3 BT258S-800LT All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 19 March 2014 2 / 13