The BT258S-800R,118 is an 800V, 118A N-channel Trench gate Field Stop IGBT transistor designed and manufactured by WeEn Semiconductor. It features an industry-leading low on-state resistance and ultra-low gate charge, which enable maximum efficiency, improved system performance, and increased design flexibility. It is configured as a two-terminal device with a relatively low overall gate charge, enabling improved frequency performance in high current applications. It features a high current handling capability, low switching loss, and a tightly controlled cell layout for superior switching characteristics. This device has an extremely robust structure and is suitable for power modules, motor control, and other high-power switching applications.