Product Information

BTA2008W-600D,135

BTA2008W-600D,135 electronic component of WeEn Semiconductor

Datasheet
Triacs 3 QUADRANT TRIACS

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7164 ea
Line Total: USD 0.72

13168 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11672 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

BTA2008W-600D,135
WeEn Semiconductor

1 : USD 0.5048
10 : USD 0.406
100 : USD 0.2427
1000 : USD 0.1598
4000 : USD 0.1426
8000 : USD 0.1392

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Taric
Category
Brand Category
LoadingGif

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BTA2008-600D 3Q Hi-Com Triac 28 September 2016 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct gate triggering from low power drivers and logic ICs High commutation capability with very sensitive gate High voltage capability Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very sensitive gate for easy logic level triggering 3. Applications Low power motor controls Small inductive loads e.g. solenoids, door locks, water valves Small loads in large white goods 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 70 C Fig. 1 - - 0.8 A T(RMS) lead Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 9 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 9.9 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 0.25 - 5 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 0.25 - 5 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA2008-600D 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- 0.25 - 5 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 10 mA H D j V on-state voltage I = 0.85 A T = 25 C Fig. 10 - 1.35 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 200 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C 0.5 - - A/ms com D j commutating current I = 0.8 A dV /dt = 10 V/s T(RMS) com gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T2 main terminal 2 T2 T1 G 2 G gate sym051 3 T1 main terminal 1 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA2008-600D TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BTA2008-600D All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 28 September 2016 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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