Product Information

BTA312X-600E,127

BTA312X-600E,127 electronic component of WeEn Semiconductor

Datasheet
BTA312X-600E/TO-220F/STANDARD
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.5949 ea
Line Total: USD 2974.5

0 - Global Stock
MOQ: 5000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 6000
Multiples : 1

Stock Image

BTA312X-600E,127
WeEn Semiconductor

6000 : USD 0.5842

Read More Specifications

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Hts Code
LoadingGif

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Additional Infomation About Product

BTA312X-600E 3Q Hi-Com Triac 30 May 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F)full pac plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct interfacing with low power drivers and microcontrollers Good immunity to false turn-on by dV/dt High commutation capability with sensitive gate High voltage capability Isolated mounting base package Planar passivated for voltage ruggedness and reliability Sensitive gate for easy logic level triggering Triggering in three quadrants only 3. Applications Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 100 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p I RMS on-state current full sine wave T 59 C Fig. 1 Fig. 2 - - 12 A T(RMS) h Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 10 mA GT D T T = 25 C Fig. 7 j Scan or click this QR code to view the latest information for this product TO-220FNXP Semiconductors BTA312X-600E 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- - - 10 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 10 mA D T T = 25 C Fig. 7 j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA312X-600E TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BTA312X-600E/DG TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac 7. Marking Table 4. Marking codes Type number Marking code BTA312X-600E BTA312X-600E/DG BTA312X-600EDG BTA312X-600E All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 30 May 2014 2 / 13

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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