BTA330B-800BTJ WeEn Semiconductor

BTA330B-800BT 3Q Hi-Com Triac Rev.01 - 16 October 2019 Product data sheet 1. General description 2 Planar passivated high commutation three quadrant triac in a TO263 (D PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI /dt can T occur. This triac will commutate the full RMS current at the maximum rated junction temperature (T = 150 C) without the aid of a snubber. It is used in applications where high junction operating j(max) temperature capability is required. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High junction operating temperature capability (T = 150 C) j(max) High voltage capability High current capability Less sensitive gate for highest noise immunity Triggering in three quadrants only Very high immunity to false turn-on by dV/dt and fast transients Surface mountable plastic package Package is RoHS compliant 3. Applications Heating controls High power motor control High power switching Applications subject to high temperature (T = 150 C) j(max) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off-state - - 800 V DRM voltage I RMS on-state current full sine wave T 120 C - - 30 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C t = 20 ms - - 270 A TSM j(init) p state current Fig. 4 Fig. 5 full sine wave T = 25 C t = 16.7 ms - - 297 A j(init) p T junction temperature - - 150 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 50 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA330B-800BT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- - - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 75 mA H D j V on-state voltage I = 42 A T = 25 C Fig. 10 - 1.2 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 4000 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit V = 536 V T = 150 C (V = 67% 2000 - - V/s DM j DM of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 30 A 20 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 150 C I = 30 A 15 - - A/ms D j T(RMS) dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb T2 mounting base main terminal 2 2 1 3 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA330B-800BT TO263 BTA330B-800BTJ Reel 800 TO263E 26-May-2017 7. Marking Table 4. Marking codes Type number Marking codes BTA330B-800BT BTA330B-800BT BTA330B-800BT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 16 October 2019 2 / 12