BTA412Y-600B,127 WeEn Semiconductor

BTA412Y-600B 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high T operating capability and j an internally isolated mounting base. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High surge capability High T j(max) Isolated mounting base with 2500 V (RMS) isolation Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications Electronic thermostats (heating and cooling) High power motor controls Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 116 C Fig. 1 - - 12 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 140 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 153 A j(init) t = 16.7 ms p T junction temperature - - 150 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 50 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA412Y-600B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 2 - 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 60 mA H D j V on-state voltage I = 18 A T = 25 C Fig. 10 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 1000 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit V = 402 V T = 150 C (V = 67% 600 - - V/s DM j DM of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 12 A 20 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 150 C I = 12 A 8 - - A/ms D j T(RMS) dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220AB (SOT78D) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA412Y-600B TO-220AB plastic single-ended package isolated heatsink mounted 1 SOT78D mounting hole 3-lead TO-220 BTA412Y-600B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 2 / 13