Product Information

BTA416Y-600C,127

BTA416Y-600C,127 electronic component of WeEn Semiconductor

Datasheet
BTA416Y-600C/SIL3P/STANDARD MA
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0052 ea
Line Total: USD 1.01

1071 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1071 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

BTA416Y-600C,127
WeEn Semiconductor

1 : USD 1.0052
10 : USD 0.7998
50 : USD 0.699
100 : USD 0.5963
500 : USD 0.5358
1000 : USD 0.5057

5820 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

BTA416Y-600C,127
WeEn Semiconductor

1000 : USD 0.5776
2000 : USD 0.566

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Additional Infomation About Product

BTA416Y-600C 3Q Hi-Com Triac 10 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high T operating capability and an internally isolated mounting base. j 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High surge capability High T j(max) Isolated mounting base with 2500 V (RMS) isolation Less sensitive gate for high noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Electronic thermostats (heating and cooling) High power motor controls Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 160 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p T junction temperature - - 150 C j I RMS on-state current full sine wave T 108 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors BTA416Y-600C 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 35 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 2 - 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 - 35 mA D T T = 25 C Fig. 7 j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220AB (SOT78D) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA416Y-600C TO-220AB plastic single-ended package isolated heatsink mounted 1 SOT78D mounting hole 3-lead TO-220 BTA416Y-600C All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 10 June 2014 2 / 13

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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