Product Information

BYV10ED-600PJ

BYV10ED-600PJ electronic component of WeEn Semiconductor

Datasheet
Rectifiers BYV10ED-600P/DPAK
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7641 ea
Line Total: USD 0.76

4764 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

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2792 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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BYV10ED-600PJ
WeEn Semiconductor

1 : USD 0.7291
10 : USD 0.6256
100 : USD 0.4347
500 : USD 0.3668
1000 : USD 0.3163
2500 : USD 0.2841
5000 : USD 0.2737
10000 : USD 0.2576
25000 : USD 0.2553

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Additional Infomation About Product

BYV10ED-600P Ultrafast power diode 4 July 2017 Product data sheet 1. General description Enhanced ultrafast power diode in a TO252 (DPAK) plastic package. 2. Features and benefits High thermal cycling performance Soft recovery characteristic Low on-state losses Surface-mountable package Low thermal resistance Enhanced avalanche energy capability 3. Applications Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 118 C 10 A F(AV) mb Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 118 C 20 A FRM p mb current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 70 A FSM p j(init) forward current Fig. 4 t = 8.3 ms T = 25 C sine-wave pulse 80 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 10 A T = 25 C Fig. 6 - 1.5 2 V F F j I = 10 A T = 150 C Fig. 6 - - 1.6 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 50 A/s - 35 50 ns rr F R F T = 25 C Fig. 7 j I = 10 A V = 200 V dI /dt = 200 A/s - 50 - ns F R F T = 25 C Fig. 7 j I = 10 A V = 200 V dI /dt = 200 A/s - 78 - ns F R F T = 125 C Fig. 7 jWeEn Semiconductors BYV10ED-600P Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 n.c. not connected K A 001aaa020 2 K cathode 1 3 A anode mb mb mounting base connected to cathode DPAK (TO252N) 1 It is not possible to connect to pin 2 of the SOT428 package. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV10ED-600P DPAK plastic single-ended surface-mounted package (DPAK) 3 leads TO252N (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BYV10ED-600P BYV10ED-600P BYV10ED-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 4 July 2017 2 / 10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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