ESDALD05UG4X WeEn Semiconductor

ESDALD05UG4 ESD Protection Diodes Array Rev.01 - 08 May 2021 Preliminary data sheet 1. General description The ESDALD05UG4 is a low capacitance TVS (Transient Voltage Suppressor) array designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge). 2. Features and benefits Peak pulse power 60W 8/20s waveform Protects two or four I/O lines IEC 61000-4-2 (ESD) 15kV(air), 8kV(contact) 1 24 5 IEC 61000-4-5 (Lightning) 4A (8/20s) Low capacitance 3,8 Low leakage current 5V operating voltage Solid-state silicon avalanche technology NC NC GND NC NC Device meets MSL 1 requirements Halogen free and RoHS compliant 10 98 76 3. Applications 12 3 45 High Definition Multi-Media Interface (HDMI) I/O1 I/O2 GND I/O3 I/O4 Digital Visual Interface (DVI) USB 1.1/2.0/OTG IEEE 1394 Firewire Ports Notebooks & Handhelds alogen-Free RoHS h Projection TV & Monitors Set-top box Flat Panel Displays PCI Express 4. Ordering information Type number Package Orderable part number Packing Small packing Marking Package Name method quantity issue date ESDALD05UG4 DFN2510 ESDALD05UG4X Tape and reel 3000 0524P 13-Oct-2020 5. Absolute maximum ratings In accordance with the Absolute Maximum Rating System (IEC 60134). T = 25 C unless otherwise specified. j Symbol Parameter Conditions Values Unit Absolute maximum rating P peak pulse power t = 8/20 s 60 W PPM p I peak pulse current t = 8/20 s 4 A PP p V ESD per IEC 61000-4-2 (air) 15 kV ESD ESD per IEC 61000-4-2 (contact) 8 kV T storage temperature range -55 to 150 C stg T operating temperature range -55 to 150 C jWeEn Semiconductors ESDALD05UG4 ESD Protection Diodes Array 6. Characteristics T = 25 C unless otherwise specified. j Symbol Parameter Condition Min Typ Max Unit V Reverse Working Voltage Any I/O pin to GND - - 5 V RWM V Reverse Breakdown Voltage I = 1 mA Any I/O pin to GND 6 - - V BR T I Reverse Leakage Current V = 5 V Any I/O pin to GND - - 100 nA R RWM V Diode Forward Voltage I = 15 mA - 0.85 1.2 V F F V Clamping Voltage I = 4 A t = 8/20 s - - 15 V C PP p Any I/O pin to GND C Junction Capacitance V = 0 V f = 1 MHz - 0.3 0.5 pF J R Between I/O pins V = 0 V f = 1 MHz - 0.6 1 pF R Any I/O pin to GND Note: I/O pins are pin 1,2,4,5 Fig. 1. Pulse rating curve Fig. 2. Peak pulse power derating curve Fig. 3. Pulse waveform Fig. 4. Clamping voltage vs Peak pulse current ESDALD05UG4 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2021. All rights reserved Product data sheet 20 May 2021 2 / 6