Product Information

ESD9N12BA-2/TR

ESD9N12BA-2/TR electronic component of Will Semiconductor

Datasheet
DFN1006-2L ESD Protection Devices ROHS

Manufacturer: Will Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.051 ea
Line Total: USD 0.51

7313 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
4656 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 20
Multiples : 20

Stock Image

ESD9N12BA-2/TR
Will Semiconductor

20 : USD 0.0479
200 : USD 0.039
600 : USD 0.0327
2000 : USD 0.0273
10000 : USD 0.0265
20000 : USD 0.0259

     
Manufacturer
Product Category
Polarity
Category
Rohs
Package
Brand Category
Voltage - Reverse Standoff Typ
Voltage - Breakdown Min
Voltage - Clamping Max @ Ipp
Current - Peak Pulse 10/1000 S
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The ESD9N12BA-2/TR with DFN1006-2L is an ESD protection device manufactured by Will Semiconductor. It is a planar low-capacitance diode to protect high-speed data line from electrostatic discharge (ESD), counter electrostatic discharge (CESD) and radio frequency electromagnetic induction (RFI EMIP). It is a dual channel protection provided on a single chip, designed to meet the robustness requirement of both IEC 61000-4-2 Level 4 as well as JESD 22-C101C. It has a 2-lead package with a low DRP package- DFN1006-2L. It is fully compatible with the RoHS requirements.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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