Product Information

WSB5539N-2/TR

WSB5539N-2/TR electronic component of Will Semiconductor

Datasheet
Schottky Barrier Diodes (SBD) DFN1006-2L RoHS

Manufacturer: Will Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0576 ea
Line Total: USD 0.58

9641 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
9467 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 10
Multiples : 10

Stock Image

WSB5539N-2/TR
Will Semiconductor

10 : USD 0.0576
100 : USD 0.0464
300 : USD 0.0408
1000 : USD 0.0366
5000 : USD 0.0332
10000 : USD 0.0314

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Voltage - Dc Reverse Vr Max
Current - Average Rectified Io
Voltage - Forward Vf Max @ If
Reverse Voltage Vr
Forward Voltage Vf@If
Average Rectified Current Io
LoadingGif

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The WSB5539N-2/TR is a surface mount Schottky Barrier Diode with DFN1006-2L (Dual Flat Non-lead) package manufactured by Will Semiconductor. It features a low forward voltage drop of typically 400mV at 1A and an ultra-fast reverse recovery time of 75ns, allowing for high speed switching applications. The device is RoHS compliant and has a junction temperature range of -55°C to 125°C. It features a low power dissipation of 1.7mW and a reverse current of 25nA at a maximum reverse voltage of 20V. It also has low leakage current and good thermal stability, making it ideal for use in high reliability applications.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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