Product Information

W631GG6KB-12

W631GG6KB-12 electronic component of Winbond

Datasheet
DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin WBGA

Manufacturer: Winbond
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 5.8932 ea
Line Total: USD 17.68

0 - Global Stock
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 190
Multiples : 1

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W631GG6KB-12
Winbond

190 : USD 0

0 - WHS 2


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 3
Multiples : 1

Stock Image

W631GG6KB-12
Winbond

3 : USD 5.8932
10 : USD 5.2362
25 : USD 5.1626
50 : USD 5.0595

0 - WHS 3


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 3
Multiples : 1

Stock Image

W631GG6KB-12
Winbond

3 : USD 5.8932
10 : USD 5.2362
25 : USD 5.1626
50 : USD 5.0595

     
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Product Category
RoHS - XON
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W631GG6KB 8M 8 BANKS 16 BIT DDR3 SDRAM Table of Contents- 1. GENERAL DESCRIPTION ................................................................................................................... 5 2. FEATURES ........................................................................................................................................... 5 3. ORDER INFORMATION ....................................................................................................................... 6 4. KEY PARAMETERS ............................................................................................................................. 7 5. BALL CONFIGURATION ...................................................................................................................... 8 6. BALL DESCRIPTION ............................................................................................................................ 9 7. BLOCK DIAGRAM .............................................................................................................................. 11 8. FUNCTIONAL DESCRIPTION ............................................................................................................ 12 8.1 Basic Functionality .............................................................................................................................. 12 8.2 RESET and Initialization Procedure .................................................................................................... 12 8.2.1 Power-up Initialization Sequence ..................................................................................... 12 8.2.2 Reset Initialization with Stable Power .............................................................................. 14 8.3 Programming the Mode Registers ....................................................................................................... 15 8.3.1 Mode Register MR0 ......................................................................................................... 17 8.3.1.1 Burst Length, Type and Order ................................................................................ 18 8.3.1.2 CAS Latency........................................................................................................... 18 8.3.1.3 Test Mode............................................................................................................... 19 8.3.1.4 DLL Reset............................................................................................................... 19 8.3.1.5 Write Recovery ....................................................................................................... 19 8.3.1.6 Precharge PD DLL ................................................................................................. 19 8.3.2 Mode Register MR1 ......................................................................................................... 20 8.3.2.1 DLL Enable/Disable ................................................................................................ 20 8.3.2.2 Output Driver Impedance Control ........................................................................... 21 8.3.2.3 ODT RTT Values .................................................................................................... 21 8.3.2.4 Additive Latency (AL) ............................................................................................. 21 8.3.2.5 Write leveling .......................................................................................................... 21 8.3.2.6 Output Disable ........................................................................................................ 21 8.3.3 Mode Register MR2 ......................................................................................................... 22 8.3.3.1 Partial Array Self Refresh (PASR) .......................................................................... 23 8.3.3.2 CAS Write Latency (CWL) ...................................................................................... 23 8.3.3.3 Auto Self Refresh (ASR) and Self Refresh Temperature (SRT) ............................. 23 8.3.3.4 Dynamic ODT (Rtt WR) ......................................................................................... 23 8.3.4 Mode Register MR3 ......................................................................................................... 24 8.3.4.1 Multi Purpose Register (MPR) ................................................................................ 24 8.4 No OPeration (NOP) Command .......................................................................................................... 25 8.5 Deselect Command ............................................................................................................................. 25 8.6 DLL-off Mode ...................................................................................................................................... 25 8.7 DLL on/off switching procedure ........................................................................................................... 26 8.7.1 DLL on to DLL off Procedure ....................................................................................... 26 8.7.2 DLL off to DLL on Procedure ....................................................................................... 27 8.8 Input clock frequency change ............................................................................................................. 28 8.8.1 Frequency change during Self-Refresh............................................................................ 28 8.8.2 Frequency change during Precharge Power-down .......................................................... 28 8.9 Write Leveling ..................................................................................................................................... 30 8.9.1 DRAM setting for write leveling & DRAM termination function in that mode .................... 31 Publication Release Date: Mar. 23, 2017 Revision: A10 - 1 - W631GG6KB 8.9.2 Write Leveling Procedure ................................................................................................. 31 8.9.3 Write Leveling Mode Exit ................................................................................................. 33 8.10 Multi Purpose Register ........................................................................................................................ 34 8.10.1 MPR Functional Description ............................................................................................. 35 8.10.2 MPR Register Address Definition ..................................................................................... 36 8.10.3 Relevant Timing Parameters ............................................................................................ 36 8.10.4 Protocol Example ............................................................................................................. 36 8.11 ACTIVE Command .............................................................................................................................. 42 8.12 PRECHARGE Command .................................................................................................................... 42 8.13 READ Operation ................................................................................................................................. 43 8.13.1 READ Burst Operation ..................................................................................................... 43 8.13.2 READ Timing Definitions .................................................................................................. 44 8.13.2.1 READ Timing Clock to Data Strobe relationship .................................................... 45 8.13.2.2 READ Timing Data Strobe to Data relationship ..................................................... 46 8.13.2.3 tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Calculation ............................................. 47 8.13.2.4 tRPRE Calculation .................................................................................................. 48 8.13.2.5 tRPST Calculation .................................................................................................. 48 8.13.2.6 Burst Read Operation followed by a Precharge...................................................... 54 8.14 WRITE Operation ................................................................................................................................ 56 8.14.1 DDR3 Burst Operation ..................................................................................................... 56 8.14.2 WRITE Timing Violations ................................................................................................. 56 8.14.2.1 Motivation ............................................................................................................... 56 8.14.2.2 Data Setup and Hold Violations .............................................................................. 56 8.14.2.3 Strobe to Strobe and Strobe to Clock Violations ..................................................... 56 8.14.2.4 Write Timing Parameters ........................................................................................ 56 8.14.3 Write Data Mask............................................................................................................... 57 8.14.4 tWPRE Calculation........................................................................................................... 58 8.14.5 tWPST Calculation ........................................................................................................... 58 8.15 Refresh Command .............................................................................................................................. 65 8.16 Self-Refresh Operation ....................................................................................................................... 67 8.17 Power-Down Modes ............................................................................................................................ 69 8.17.1 Power-Down Entry and Exit ............................................................................................. 69 8.17.2 Power-Down clarifications - Case 1 ................................................................................. 75 8.17.3 Power-Down clarifications - Case 2 ................................................................................. 75 8.17.4 Power-Down clarifications - Case 3 ................................................................................. 76 8.18 ZQ Calibration Commands .................................................................................................................. 77 8.18.1 ZQ Calibration Description ............................................................................................... 77 8.18.2 ZQ Calibration Timing ...................................................................................................... 78 8.18.3 ZQ External Resistor Value, Tolerance, and Capacitive loading ...................................... 78 8.19 On-Die Termination (ODT) .................................................................................................................. 79 8.19.1 ODT Mode Register and ODT Truth Table ...................................................................... 79 8.19.2 Synchronous ODT Mode .................................................................................................. 80 8.19.2.1 ODT Latency and Posted ODT ............................................................................... 80 8.19.2.2 Timing Parameters ................................................................................................. 80 8.19.2.3 ODT during Reads .................................................................................................. 82 8.19.3 Dynamic ODT .................................................................................................................. 83 8.19.3.1 Functional Description: ........................................................................................... 83 8.19.3.2 ODT Timing Diagrams ............................................................................................ 84 8.19.4 Asynchronous ODT Mode ................................................................................................ 88 Publication Release Date: Mar. 23, 2017 Revision: A10 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Winbond Elec
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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