Product Information

W631GG6NB-12

W631GG6NB-12 electronic component of Winbond

Datasheet
DRAM 1Gb DDR3 SDRAM, x16, 800MHz

Manufacturer: Winbond
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.077 ea
Line Total: USD 4.08

1 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
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1 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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W631GG6NB-12
Winbond

1 : USD 3.473
10 : USD 3.1855
100 : USD 2.829
198 : USD 2.829
594 : USD 2.737
1188 : USD 2.645
2574 : USD 2.5185
5148 : USD 2.438
10098 : USD 2.392

     
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W631GG6NB 8M 8 BANKS 16 BIT DDR3 SDRAM Table of Contents- 1. GENERAL DESCRIPTION ................................................................................................................... 5 2. FEATURES ........................................................................................................................................... 5 3. ORDER INFORMATION ....................................................................................................................... 6 4. KEY PARAMETERS ............................................................................................................................. 7 5. BALL CONFIGURATION ...................................................................................................................... 9 6. BALL DESCRIPTION .......................................................................................................................... 10 7. BLOCK DIAGRAM .............................................................................................................................. 12 8. FUNCTIONAL DESCRIPTION ............................................................................................................ 13 8.1 Basic Functionality .............................................................................................................................. 13 8.2 RESET and Initialization Procedure .................................................................................................... 13 8.2.1 Power-up Initialization Sequence ..................................................................................... 13 8.2.2 Reset Initialization with Stable Power .............................................................................. 15 8.3 Programming the Mode Registers ....................................................................................................... 16 8.3.1 Mode Register MR0 ......................................................................................................... 18 8.3.1.1 Burst Length, Type and Order ................................................................................ 19 8.3.1.2 CAS Latency........................................................................................................... 19 8.3.1.3 Test Mode............................................................................................................... 20 8.3.1.4 DLL Reset............................................................................................................... 20 8.3.1.5 Write Recovery ....................................................................................................... 20 8.3.1.6 Precharge PD DLL ................................................................................................. 20 8.3.2 Mode Register MR1 ......................................................................................................... 21 8.3.2.1 DLL Enable/Disable ................................................................................................ 21 8.3.2.2 Output Driver Impedance Control ........................................................................... 22 8.3.2.3 ODT RTT Values .................................................................................................... 22 8.3.2.4 Additive Latency (AL) ............................................................................................. 22 8.3.2.5 Write leveling .......................................................................................................... 22 8.3.2.6 Output Disable ........................................................................................................ 22 8.3.3 Mode Register MR2 ......................................................................................................... 23 8.3.3.1 Partial Array Self Refresh (PASR) .......................................................................... 24 8.3.3.2 CAS Write Latency (CWL) ...................................................................................... 24 8.3.3.3 Auto Self Refresh (ASR) and Self Refresh Temperature (SRT) ............................. 24 8.3.3.4 Dynamic ODT (Rtt WR) ......................................................................................... 24 8.3.4 Mode Register MR3 ......................................................................................................... 25 8.3.4.1 Multi Purpose Register (MPR) ................................................................................ 25 8.4 No OPeration (NOP) Command .......................................................................................................... 26 8.5 Deselect Command ............................................................................................................................. 26 8.6 DLL-off Mode ...................................................................................................................................... 26 8.7 DLL on/off switching procedure ........................................................................................................... 27 8.7.1 DLL on to DLL off Procedure ....................................................................................... 27 8.7.2 DLL off to DLL on Procedure ....................................................................................... 28 8.8 Input clock frequency change ............................................................................................................. 29 8.8.1 Frequency change during Self-Refresh............................................................................ 29 8.8.2 Frequency change during Precharge Power-down .......................................................... 29 8.9 Write Leveling ..................................................................................................................................... 31 8.9.1 DRAM setting for write leveling & DRAM termination function in that mode .................... 32 Publication Release Date: Dec. 10, 2020 Revision: A01 - 1 - W631GG6NB 8.9.2 Write Leveling Procedure ................................................................................................. 32 8.9.3 Write Leveling Mode Exit ................................................................................................. 34 8.10 Multi Purpose Register ........................................................................................................................ 35 8.10.1 MPR Functional Description ............................................................................................. 36 8.10.2 MPR Register Address Definition ..................................................................................... 37 8.10.3 Relevant Timing Parameters ............................................................................................ 37 8.10.4 Protocol Example ............................................................................................................. 37 8.11 ACTIVE Command .............................................................................................................................. 43 8.12 PRECHARGE Command .................................................................................................................... 43 8.13 READ Operation ................................................................................................................................. 44 8.13.1 READ Burst Operation ..................................................................................................... 44 8.13.2 READ Timing Definitions .................................................................................................. 45 8.13.2.1 READ Timing Clock to Data Strobe relationship .................................................... 46 8.13.2.2 READ Timing Data Strobe to Data relationship ..................................................... 47 8.13.2.3 tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Calculation ............................................. 48 8.13.2.4 tRPRE Calculation .................................................................................................. 49 8.13.2.5 tRPST Calculation .................................................................................................. 49 8.13.2.6 Burst Read Operation followed by a Precharge...................................................... 55 8.14 WRITE Operation ................................................................................................................................ 57 8.14.1 DDR3 Burst Operation ..................................................................................................... 57 8.14.2 WRITE Timing Violations ................................................................................................. 57 8.14.2.1 Motivation ............................................................................................................... 57 8.14.2.2 Data Setup and Hold Violations .............................................................................. 57 8.14.2.3 Strobe to Strobe and Strobe to Clock Violations ..................................................... 57 8.14.2.4 Write Timing Parameters ........................................................................................ 57 8.14.3 Write Data Mask............................................................................................................... 58 8.14.4 tWPRE Calculation........................................................................................................... 59 8.14.5 tWPST Calculation ........................................................................................................... 59 8.15 Refresh Command .............................................................................................................................. 66 8.16 Self-Refresh Operation ....................................................................................................................... 68 8.17 Power-Down Modes ............................................................................................................................ 70 8.17.1 Power-Down Entry and Exit ............................................................................................. 70 8.17.2 Power-Down clarifications - Case 1 ................................................................................. 76 8.17.3 Power-Down clarifications - Case 2 ................................................................................. 76 8.17.4 Power-Down clarifications - Case 3 ................................................................................. 77 8.18 ZQ Calibration Commands .................................................................................................................. 78 8.18.1 ZQ Calibration Description ............................................................................................... 78 8.18.2 ZQ Calibration Timing ...................................................................................................... 79 8.18.3 ZQ External Resistor Value, Tolerance, and Capacitive loading ...................................... 79 8.19 On-Die Termination (ODT) .................................................................................................................. 80 8.19.1 ODT Mode Register and ODT Truth Table ...................................................................... 80 8.19.2 Synchronous ODT Mode .................................................................................................. 81 8.19.2.1 ODT Latency and Posted ODT ............................................................................... 81 8.19.2.2 Timing Parameters ................................................................................................. 81 8.19.2.3 ODT during Reads .................................................................................................. 83 8.19.3 Dynamic ODT .................................................................................................................. 84 8.19.3.1 Functional Description: ........................................................................................... 84 8.19.3.2 ODT Timing Diagrams ............................................................................................ 85 8.19.4 Asynchronous ODT Mode ................................................................................................ 89 Publication Release Date: Dec. 10, 2020 Revision: A01 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Winbond Elec
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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