X-On Electronics has gained recognition as a prominent supplier of WFD7N65L mosfet across the USA, India, Europe, Australia, and various other global locations. WFD7N65L mosfet are a product manufactured by Winsemi. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

WFD7N65L Winsemi

WFD7N65L electronic component of Winsemi
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Part No.WFD7N65L
Manufacturer: Winsemi
Category:MOSFET
Description: MOSFET N Trench 650V 7A (Tc) 4V @ 250uA 1.45 Ω @ 3.5A,10V TO-252 RoHS
Datasheet: WFD7N65L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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We are delighted to provide the WFD7N65L from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WFD7N65L and other electronic components in the MOSFET category and beyond.

The WFD7N65L TO-252 RoHS is a power MOSFET manufactured by Winsemi. This MOSFET has a 650V drain-source voltage rating and a 7A drain-source current rating. Its maximum drain-source on-resistance is 1.45 Ω at a drain current of 3.5A. Additionally, its gate-source threshold voltage is 4V and the maximum gate leakage current is 250uA. This MOSFET is manufactured using the N Trench MOSFET technology which helps reduce switching losses and gate charge resulting in improved efficiency. The FE package make it suitable for a wide range of applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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