C3D02065E V = 650 V RRM Silicon Carbide Schottky Diode I (T =135C) = 4 A C F Z -Rec Rectifier Q = 5.8 nC c Features Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V TO-252-2 F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency PIN 1 Reduction of Heat Sink Requirements CASE Parallel Devices Without Thermal Runaway PIN 2 Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C3D02065E TO-252-2 C3D02065 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Blocking Voltage 650 V DC 8 T =25C C I Continuous Forward Current 4 A T =135C Fig. 3 F C 2 T =161C C 11 T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 7.5 T =110C, t =10 ms, Half Sine Pulse C P 16.5 T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 15 T =110C, t =10 ms, Half Sine Pulse C P 120 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 110 T =110C, t =10 m s, Pulse C P 39.5 T =25C C P Power Dissipation W Fig. 4 tot 17 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-650V R 1.35 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 1.12 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 C3D02065E Rev. A, 10-2016Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.7 I = 2 A T =25C F J V Forward Voltage V Fig.1 F 1.8 2.4 I = 2 A T =175C F J 3.5 18 V = 650 V T =25C R J I Reverse Current A Fig. 2 R 7.5 60 V = 650 V T =175C R J V = 400 V, I = 2A R F Q Total Capacitive Charge 5.8 nC di /dt = 500 A/ S Fig. 5 C T = 25C J 175 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 10.5 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 8.5 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 0.8 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit R TO-252 Package Thermal Resistance from Junction to Case 3.8 C/W JC Typical Performance 6 100 T = -55 C J 5 80 T = 25 C J T = 75 C 4 J T = 175 C J 60 T = 125 C J T = 125 C J 3 T = 175 C J T = 75 C J 40 22 TT = = 25 25 CC J T = -55 C J 20 1 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 1200 Foward Voltage, V (V) V (V) V (V) F Reverse Voltage, V (V) F R R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D02065E Rev. A, 10-2016 FFoowwaarrdd CCururrrenentt,, II (A) F I (A) F RReveveerrssee LLeeaakkaaggee CCuurrrreenntt,, II (uA) RR I (mA) R