C3D12065A V = 650 V RRM Silicon Carbide Schottky Diode I (T =135C) = 16 A F C Z -Rec Rectifier Q = 34 nC c Features Package 650 Volt Schottky Rectifier Zero Reverse Recover y Current Zero For ward Recover y Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-220-2 Benefits PIN 1 Replace Bipolar with Unipolar Rectifiers CASE Essentially No Switching Losses PIN 2 Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices WithoutThermal Runaway Part Number Package Marking Applications C3D12065A TO-220-2 C3D12065 Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inver ter stages AC/DC conver ters Maximum Ratings (T =25C unless other wise specified) C Symbol Parameter Value Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Blocking Voltage 650 V DC 35 T =25C C I Continuous For ward Current 16 A T =135C Fig. 3 F C 12 T =150C C 51.5 T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak For ward Surge Current A FRM 33.5 T -110C, t =10 ms, Half Sine Pulse C P 104 T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Peak For ward Surge Current A Fig. 8 FSM 82 T =110C, t =10 ms, Half Sine Pulse C P 1075 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak For ward Current A Fig. 8 F,Max 900 T =110C, t =10 m s, Pulse C P 143 T =25C C P Power Dissipation W Fig. 4 tot 62 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-650V R 54 T =25C, t =10 ms 2 2 2 C P i dt i t value (Per Leg) A s 33.5 T =110C, t =10 ms C P T , T Operating Junction and StorageTemper ature -55 to +175 C J stg 1 Nm M3 Screw TO-220 Mounting Torque 6-32 Screw 8.8 lbf-in C3D12065A Rev. -, 12-2016 1Electrical Characteristics Test Conditions Symbol Parameter Typ. Max. Unit Note I = 12 A T =25C 1.5 1.8 F J Fig. 1 V For ward Voltage V F I = 12 A T =175C 2.0 2.4 F J 15 74 V = 650 V T =25C R J Fig. 2 I Reverse Current A R 29 295 V = 650 V T =175C R J V = 400 V, I = 12 A R F 34 di /dt = 500 A/s Fig. 5 Q Total Capacitive Charge nC C T = 25C J 641.5 V = 0 V, T = 25C, f = 1 MHz R J 57 V = 200 V, T = 25C, f = 1 MHz Fig. 6 C Total Capacitance pF R J 47.5 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 4.8 J V = 400 V Fig. 7 C R Note:This is a majority carrier diode, so there is no reverse recover y charge. Thermal Characteristics Symbol Parameter Typ. Unit Note 1.05 Fig. 9 R Thermal Resistance from Junction to Case C/W JC Typical Performance 200 36 T = -55 C J 32 T = 25 C J 160 28 T = 75 C J 24 T = 125 C J 120 20 T = 175 C T = 175 C J J T = 125 C J 16 80 T = 75 C J 1212 TT == 25 25 CC J T = -55 C J 8 40 4 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 200 400 600 800 1000 V (V) V (V) V (V ) F R F Figure 1. For ward Characteristics Figure 2. Reverse Characteristics C3D12065A Rev. -, 12-2016 2 I (A) I (A) FF I (A) R