C6D08065A
V = 650 V
RRM
Silicon Carbide Schottky Diode
I (T =155C) = 8 A
F C
Z -Rec Rectifier
Q = 29 nC
c
Package
Features
th
New 6 Generation Technology
Low Forward Voltage Drop (V )
F
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Low Leakage Current (I )
r
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on V
F
TO-220-2
Benefits
PIN 1
Higher System Level Efficiency CASE
PIN 2
Increase System Power Density
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Part Number Package Marking
Switch Mode Power Supplies (SMPS)
C6D08065A TO-220-2 C6D08065
Server/Telecom Power Supplies
Industrial Power Supplies
Solar
UPS
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Repetitive Peak Reverse Voltage 650 V
RRM
V DC Blocking Voltage 650 V
DC
30 T =25C
C
I Continuous Forward Current 16 A T =125C Fig. 3
F C
8 T =155C
C
37 T =25C, t = 10 ms, Half Sine Wave
C P
I Repetitive Peak Forward Surge Current A
FRM
22 T =110C, t =10 ms, Half Sine Wave
C P
69 T =25C, t = 10 ms, Half Sine Wave
C p
I Non-Repetitive Peak Forward Surge Current A Fig. 8
FSM
63 T =110C, t = 10 ms, Half Sine Wave
C p
860 T =25C, t = 10 s, Pulse
C P
I Non-Repetitive Peak Forward Surge Current A Fig. 8
F,Max
790 T =110C, t = 10 s, Pulse
C P
92.6 T =25C
C
P Power Dissipation W Fig. 4
tot
40.1 T =110C
C
-55 to
T , T Operating Junction and Storage Temperature C
J stg
+175
1 Nm
M3 Screw
TO-220 Mounting Torque
6-32 Screw
8.8 lbf-in
C6D08065A, Rev. -, 04-2019
1Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.27 1.50 I = 8 A T =25C
F J
V Forward Voltage V Fig. 1
F
1.37 1.60 I = 8 A T =175C
F J
2 40 V = 650 V T =25C
R J
I Reverse Current A Fig. 2
R
15 160 V = 650 V T =175C
R J
V = 400 V, I = 8A
R F
Q Total Capacitive Charge 29 nC Fig. 5
C
T = 25C
J
518 V = 0 V, T = 25C, f = 1 MHz
R J
C Total Capacitance 57 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6
R J
45 V = 400 V, T = 25C, f = 1 MHz
R J
E Capacitance Stored Energy 4.4 J V = 400 V Fig. 7
C R
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
R Thermal Resistance from Junction to Case 1.62 C/W Fig. 9
JC
Typical Performance
100
20
18
T = -55C
J
T = 25C
J
80
16
T = 75C
J
T = 125C
J
14
T = 175C
J
12
60
T = 175 C
J
10
T = 125 C
J
8
40
T = 75 C
J
6
T = 25 C
J
4
20
T = -55 C
J
2
0
0
0.5 1.0 1.5 2.0 2.5
0 100 200 300 400 500 600 700 800
Foward Voltage, V (V)
VV (V) (V) V (V)
V (V) F ReversVeV V (V)o (V)ltage, V (V)
R
F F
F R R
R
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
C6D08065A, Rev. -, 04-2019
2
Foward Current, I (A)
F
II (A) (A)I (A)
F
F F
Reverse Leakage Current, I (uA)
RR
I ( mA)
I (I m (A)mA)
R
R R