CAB008A12GM3 V 1200 V DS 1200 V, 8 m All-Silicon Carbide R 8 m DS(on) Half-Bridge Module Technical Features Package Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminum Nitride Ceramic Substrate Applications DC+ EV Chargers Solar G1 High-Efficiency Converters / Inverters S1 AC Motor & Traction Drives Smart-Grid / Grid-Tied Distributed Generation T1 G2 -t S2 T2 DC- System Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching & Conduction Losses of SiC Reduced Thermal Requirements and System Cost Maximum Parameters (Verified by Design) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Voltage 1200 DS max V Gate-Source Voltage, Maximum Value -8 +19 V Transient, <100 ns GS max Fig. 33 V Gate-Source Voltage, Recommended -4 +15 Static GS op DC Continuous Drain Current (T 150 C) 182 V = 15 V, T = 75C, T 150C Fig. 20 VJ GS HS VJ I D DC Continuous Drain Current (T 175 C) 198 V = 15 V, T = 75C, T 175C VJ GS HS VJ A I DC Source-Drain Current (Body Diode) 132 V = -4 V, T = 75C, T 175C SD BD GS HS VJ t limited by T Pmax VJ-max I Maximum Pulsed Drain Current 396 D (pulsed) V = 15 V, T = 75C GS HS -40 150 C Operation Maximum Virtual Junction Temperature T VJ op under Switching Conditions -40 175 C Intermittent with Reduced Life Rev. 0, 2021-11-08 CAB008A12GM3 4600 Silicon Dr., Durham, NC 27703 1 Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo are registered trademarks of Cree, Inc.MOSFET Characteristics (Per Position) (T = 25C unless otherwise specified) VJ Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 1200 V = 0 V, T = -40C (BR)DSS GS VJ 1.8 2.5 3.6 V V = V , I = 46 mA DS GS D V Gate Threshold Voltage GS(th) 2.1 V = V , I = 46 mA, T = 150C DS GS D VJ I Zero Gate Voltage Drain Current 5 80 V = 0 V, V = 1200 V DSS GS DS A I Gate-Source Leakage Current 0.05 1.5 V = 15 V, V = 0 V GSS GS DS 8.0 10.4 V = 15 V, I = 150 A GS D Fig. 2 Drain-Source On-State Resistance R 12.8 m V = 15 V, I = 150 A, T = 150C GS D VJ DS(on) (Devices Only) Fig. 3 14.4 V = 15 V, I = 150 A, T = 175C GS D VJ 107 V = 20 V, I = 150 A DS DS g Transconductance S Fig. 4 fs 101 V = 20 V, I = 150 A, T = 150C DS DS VJ Turn-On Switching Energy, T = 25C 2.98 VJ V = 600 V, E T = 125C 3.26 DD On VJ I = 150 A, T = 150C 3.44 VJ D Fig. 11 mJ V = -4 V/15 V, GS Fig. 13 Turn-Off Switching Energy, T = 25C 0.26 VJ R = 0.0 , R = 1.5 , G(OFF) G(ON) E T = 125C 0.28 Off VJ L = 40 H T = 150C 0.28 VJ R Internal Gate Resistance 1.68 f = 100 kHz, V = 25 mV G(int) AC C Input Capacitance 13.6 iss V = 0 V, V = 800 V, GS DS nF C Output Capacitance 0.56 Fig. 9 oss V = 25 mV, f = 100 kHz AC C Reverse Transfer Capacitance 43 pF rss Q Gate to Source Charge 160 GS V = 800 V, V = -4 V/15 V DS GS Q Gate to Drain Charge 136 nC I = 150 A GD D Per IEC60747-8-4 pg 21 Q Total Gate Charge 472 G FET Thermal Resistance, Junction to R 0.174 C/W Fig. 17 th JH Heatsink Rev. 0, 2021-11-08 CAB008A12GM3 4600 Silicon Dr., Durham, NC 27703 2 Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo are registered trademarks of Cree, Inc.