CGHV14250 250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Description Crees CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for DC - 1.6 GHz L-Band radar amplifier Package Types: 440162, 440161 applications. The transistor could be utilized for band specific PNs: CGHV14250F, CGHV14250P applications ranging from 0.9 through 1.8 GHz. The package options are ceramic/metal flange and pill package. Typical Performance Over 1.2 - 1.4 GHz (TC = 25C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 365 365 350 310 330 W Gain 18.6 18.6 18.4 17.9 18.2 dB Drain Efficiency 80 80 77 74 76 % Note: Measured in the CGHV14250-AMP amplifier circuit, under 500 s pulse width, 10% duty cycle, P = 37 dBm. IN Features Reference design amplifier 1.2 - 1.4 GHz Operation 77 % Typical Drain Efficiency FET Tuning range UHF through 1800 MHz < 0.3 dB Pulsed Amplitude Droop 330 W Typical Output Power Internally pre-matched on input, 18 dB Power Gain unmatched output Large Signal Models Available for ADS and MWO Rev 2.3 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV14250 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 42 mA 25C GMAX 1 Maximum Drain Current I 18 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 CW Thermal Resistance, Junction to Case R 0.95 C/W P = 167 W, 65C JC DISS 3 Pulsed Thermal Resistance, Junction to Case R 0.57 C/W P = 167 W, 500 sec, 10%, 85C JC DISS 4 Pulsed Thermal Resistance, Junction to Case R 0.63 C/W P = 167 W, 500 sec, 10%, 85C JC DISS 5 Case Operating Temperature T -40, +130 C P = 167 W, 500 sec, 10% C DISS 3 Notes: Measured for the CGHV14250P 1 4 Current limit for long term, reliable operation Measured for the CGHV14250F 2 5 Refer to the Application Note on soldering at See also, the Power Dissipation De-rating Curve on Page 5 wolfspeed.com/rf/document-library Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 41.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 500 mA GS(Q) DC DS D 2 Saturated Drain Current I 27.2 38.9 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 41.8 mA BR DC GS D 3 RF Characteristics (T = 25C, F = 1.4 GHz unless otherwise noted) C 0 Output Power P 260 300 W V = 50 V, I = 500 mA, P = 37 dBm OUT DD DQ IN Drain Efficiency D 70 77 % V = 50 V, I = 500 mA, P = 37 dBm E DD DQ IN Power Gain G 17.8 dB V = 50 V, I = 500 mA, P = 37 dBm P DD DQ IN Pulsed Amplitude Droop D -0.3 dB V = 50 V, I = 500 mA DD DQ No damage at all phase angles, V = 50 DD Output Mismatch Stress VSWR 5 : 1 Y V, I = 500 mA, P = 37 dBm Pulsed DQ IN Dynamic Characteristics Input Capacitance C 150 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 16 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 1.35 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV14250-AMP. Pulsed Width = 500 S, Duty Cycle = 10%. Rev 2.3 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com