X-On Electronics has gained recognition as a prominent supplier of A3R1GE40JBF-8E DRAM across the USA, India, Europe, Australia, and various other global locations. A3R1GE40JBF-8E DRAM are a product manufactured by Zentel. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

A3R1GE40JBF-8E Zentel

A3R1GE40JBF-8E electronic component of Zentel
A3R1GE40JBF-8E Zentel
A3R1GE40JBF-8E DRAM
A3R1GE40JBF-8E  Semiconductors

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Part No. A3R1GE40JBF-8E
Manufacturer: Zentel
Category: DRAM
Description: DRAM DDR2 1Gb, 64Mx16, 800 @CL5, 1.8V, FBGA-84
Datasheet: A3R1GE40JBF-8E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.5625 ea
Line Total: USD 3.56 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 10 Jul to Mon. 14 Jul
MOQ : 1
Multiples : 1
1 : USD 3.5625
10 : USD 3.0015
25 : USD 2.827
100 : USD 2.596
250 : USD 2.552
500 : USD 2.497
2000 : USD 2.167

   
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We are delighted to provide the A3R1GE40JBF-8E from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A3R1GE40JBF-8E and other electronic components in the DRAM category and beyond.

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Doc. No. DSA3R1GE340JBFF.04 A3R1GE30JBF/A3R1GE40JBF 1Gb DDR2 SDRAM 1Gb DDR2 SDRAM Specification Specifications Features Density: 1G bits Double data-rate architecture: two data transfers per Organization clock cycle o 8 banks x 16M words x 8 bits The high-speed data transfer is realized by the 4 bits o 8 banks x 8M words x 16 bits prefetch pipelined architecture Package Bi-directional differential data strobe (DQS and /DQS) is o 60-ball FBGA (x8) transmitted/received with data for capturing data at the o 84-ball FBGA (x16) receiver o Lead-free(RoHS compliant) DQS is edge-aligned with data for READs center- aligned Power supply with data for WRITEs o V ,V =1.7 to 1.9V DD DDQ Differential clock inputs (CK and /CK) Data Rate: 1066Mbps/800Mbps DLL aligns DQ and DQS transitions with CK transitions 1KB page size (x8) Commands entered on each positive CK edge data and o Row address: AX0 to AX13 data mask referenced to both edges of DQS o Column address: AY0 to AY9 Data mask (DM) for write data 2KB page size (x16) Posted CAS by programmable additive latency for better o Row address: AX0 to AX12 command and data bus efficiency o Column address: AY0 to AY9 On-Die-Termination for better signal quality Eight internal banks for concurrent operation Programmable RDQS, /RDQS output for making x8 Interface: SSTL 18 organization compatible with x4 organization o Burst lengths (BL): 4 , 8 /DQS, (/RDQS) can be disabled for single-ended Data Burst type (BT): Strobe operation o Sequential Off-Chip Driver (OCD) impedance adjustment is not o Interleave supported CAS latency (CL): 3, 4, 5, 6, 7 Precharge: Auto precharge option for each burst access Driver strength: Normal/Weak Low self-refresh current (IDD6) parts are available Refresh: auto-refresh, self-refresh Refresh cycles: 8192 cycles/64ms o Average auto-refresh period 7.8us at TC +85 3.9us at TC > +85 Automotive grade 3 compliant with AEC-Q100 grade 3 Automotive grade 2 compliant with AEC-Q100 grade 2 Operating case temperature range o TC = 0C to +85C (Commercial grade) o TC = -40C to +95C (Industrial range) o TC = -40C to +95C (Automotive grade 3) o TC = -40C to +105C (Automotive grade 2) Rev. 04 Oct. 13, 2020 1 of 25 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved. Doc. No. DSA3R1GE340JBFF.04 A3R1GE30JBF/A3R1GE40JBF 1Gb DDR2 SDRAM Table of Contents 1Gb DDR2 SDRAM Specification ....................................................................................................................... 1 1. Ordering Information ............................................................................................................................ 3 2. Package Ball Assignment ....................................................................................................................... 4 3. Package outline drawing........................................................................................................................ 5 4. Electrical Specifications: ........................................................................................................................ 7 5. Block Diagram ..................................................................................................................................... 15 6. Pin function ......................................................................................................................................... 16 7. Command Operation ........................................................................................................................... 18 8. Functional Description ......................................................................................................................... 19 Rev. 04 Oct. 13, 2020 2 of 25 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
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