A3T1GF30CBF-GM Zentel

A3T1GF30CBF-GM electronic component of Zentel
A3T1GF30CBF-GM Zentel
A3T1GF30CBF-GM DRAM
A3T1GF30CBF-GM  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of A3T1GF30CBF-GM DRAM across the USA, India, Europe, Australia, and various other global locations. A3T1GF30CBF-GM DRAM are a product manufactured by Zentel. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. A3T1GF30CBF-GM
Manufacturer: Zentel
Category: DRAM
Description: DRAM DDR3 1Gb, 128Mx8, 1600 @CL11, 1.5V, FBGA-78
Datasheet: A3T1GF30CBF-GM Datasheet (PDF)
Price (USD)
2200: USD 2.409 ea
Line Total: USD 5299.8 
Availability : 0
  
QtyUnit Price
2200$ 2.409

Availability 0
Ship by Tue. 07 Oct to Thu. 09 Oct
MOQ : 2200
Multiples : 2200
QtyUnit Price
2200$ 2.409

   
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We are delighted to provide the A3T1GF30CBF-GM from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A3T1GF30CBF-GM and other electronic components in the DRAM category and beyond.

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Doc. No. DSA3T1GF340CBFF.04 A3T1GF30CBF/A3T1GF40CBF 1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Specification Specifications Features Density: 1G bits The high-speed data transfer is realized by the 8 Organization bits prefetch pipelined architecture o 8 banks x 16M words x 8 bits Double data-rate architecture: two data transfers o 8 banks x 8M words x 16 bits per clock cycle Package Bi-directional differential data strobe (DQS and o 78-ball FBGA /DQS) is transmitted/received with data for o 96-ball FBGA capturing data at the receiver o Lead-free(RoHS compliant) and Halogen-free DQS is edge-aligned with data for READs center Power supply: aligned with data for WRITEs o VDD, VDDQ =1.5V (1.425 to 1.575V) Differential clock inputs (CK and /CK) Data Rate: 1333Mbps/1600Mbps/1866Mbps (max.) DLL aligns DQ and DQS transitions with CK 1KB page size (x8) transitions o Row address: AX0 to AX13 Commands entered on each positive CK edge data o Column address: AY0 to AY9 and data mask referenced to both edges of DQS 2KB page size (x16) Data mask (DM) for write data o Row address: AX0 to AX12 Posted CAS by programmable additive latency for o Column address: AY0 to AY9 better command and data bus efficiency Eight internal banks for concurrent operation On-Die Termination (ODT) for better signal quality Burst lengths(BL): 8 and 4 with Burst Chop(BC) o Synchronous ODT Burst type(BT) o Dynamic ODT o Sequential (8, 4 with BC) o Asynchronous ODT o Interleave (8, 4 with BC) Multi Purpose Register (MPR) for pre-defined CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13 pattern read out CAS Write Latency (CWL): 5, 6, 7, 8, 9 ZQ calibration for DQ drive and ODT Precharge: auto precharge option for each burst Programmable Partial Array Self-Refresh (PASR) access RESET pin for Power-up sequence and reset Driver strength: RZQ/7, RZQ/6 (RZQ = 240) function Refresh: auto-refresh, self-refresh SRT(Self Refresh Temperature) range: Average refresh period o Normal/Extended o 7.8us at TC +85 Auto Self-Refresh (ASR) o 3.9us at TC > +85 Programmable output driver impedance control Operating temperature range JEDEC compliant DDR3 o TC = 0C to +95C (Commercial grade) o TC = -40C to +95C (Industrial grade) o TC = -40C to +105C (Automotive grade) Key Timing Parameters Speed Grade Data Rate(Mbps) CL nRCD nRP 1, 2 -HP 1866 13 13 13 1 -GM 1600 11 11 11 -DK 1333 9 9 9 Notes: 1. Backward compatible to 1333, CL-nRCD-nRP = 9-9-9 2. Backward compatible to 1600, CL-nRCD-nRP = 11-11-11 Rev. 04 Oct. 14, 2020 1 of 36 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved. Doc. No. DSA3T1GF340CBFF.04 A3T1GF30CBF/A3T1GF40CBF 1Gb DDR3 SDRAM Table of Contents 1Gb DDR3 SDRAM Specification ....................................................................................................................... 1 1. Ordering Information ............................................................................................................................ 3 2. Package Ball Assignment ....................................................................................................................... 4 3. Package outline drawing........................................................................................................................ 5 4. Electrical Specifications ......................................................................................................................... 7 5. Block Diagram ..................................................................................................................................... 17 6. Pin Function ........................................................................................................................................ 18 7. Command Operation ........................................................................................................................... 20 8. Functional Description ......................................................................................................................... 24 Rev. 04 Oct. 14, 2020 2 of 36 Zentel Japan Corporation reserves the right to change products and/or specifications without notice. 2020 Zentel Japan Corporation. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
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