MP18021 100V High Frequency Half-Bridge Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP18021 is a high frequency, 100V half Drives N-channel MOSFET half bridge bridge N-channel power MOSFET driver. Its low 100V V voltage range BST side and high side driver channels are On-chip bootstrap diode independently controlled and matched with less Typical 16ns propagation delay time than 5ns in time delay. Under voltage lock-out on Less than 5ns gate drive matching both high side and low side supplies force their Drive 1nF load with 12ns/9ns rise/fall times outputs low in case of insufficient supply. The with 12V VDD integrated bootstrap diode reduces external TTL compatible input component count. Less than 150 A quiescent current UVLO for both high side and low side In SOIC8 EPAD and 33mm QFN8 Packages APPLICATIONS Telecom half bridge power supplies Avionics DC-DC converters Two-switch forward converters Active clamp forward converters All MPS parts are lead-free, halogen free, and adhere to the RoHS directive. For MPS green status, please visit MPS website under Quality Assurance. MPS and The Future of Analog IC Technology are Registered Trademarks of Monolithic Power Systems, Inc. TYPICAL APPLICATION +12V 48V SECONDARY VDD SIDE CIRCUIT BST INH DRIVE DRVH HI PWM SW CONTROLLER INL DRVL DRIVE LO MP18021 VSS ISOLATION AND FEEDBACK MP18021 Rev. 1.12 www.MonolithicPower.com 1 6/14/2018 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2018 MPS. All Rights Reserved. CONTROLMP18021 100V HIGH FREQUENCY HALF-BRIDGE GATE DRIVER ORDERING INFORMATION Part Number* Package Top Marking Free Air Temperature (T ) A SOIC8EP MP18021HN MP18021HN -40 C to + 125 C QFN8 (3x 3mm) MP18021HQ ABN -40 C to + 125 C * For Tape & Reel, add suffix Z (e.g. MP18021HNZ) For RoHS compliant packaging, add suffix LF (e.g. MP18021HNLFZ) For Tape & Reel, add suffix Z (e.g. MP18021HQZ) For RoHS compliant packaging, add suffix LF (e.g. MP18021HQLFZ) PACKAGE REFERENCE TOP VIEW TOP VIEW 1 8 VDD 1 8 DRVL VDD DRVL 2 7 BST VSS BST 2 7 VSS DRVH 3 6 INL DRVH 3 6 INL SW 4 5 INH SW 4 5 INH EXPOSED PAD ON BACKSIDE SOIC8EP QFN8 (1) (4) ABSOLUTE MAXIMUM RATINGS Thermal Resistance JA JC Supply Voltage (V ) ..................... -0.3V to +18V SOIC8 (Exposed Pad) ............ 48 ...... 10 ... C/W DD SW Voltage (V ) ......................... -5.0V to 100V SW QFN8 (3x3) ............................. 50 ...... 12 ... C/W BST Voltage (V ) ....................... -0.3V to 100V BST Notes: BST to SW .................................... -0.3V to +18V 1) Exceeding these ratings may damage the device. DRVH to SW ................................. -0.3V to +18V 2) The maximum allowable power dissipation is a function of the maximum junction temperature T(MAX), the junction-to- All Other Pins ...................... -0.3V to (V +0.3V) J DD ambient thermal resistance , and the ambient temperature (2) JA Continuous Power Dissipation (T =+25C) A T . The maximum allowable continuous power dissipation at A any ambient temperature is calculated by P (MAX)=(T (MAX)- D J SOIC8 (Exposed Pad) ............................... 2.6W T )/ . Exceeding the maximum allowable power dissipation A JA QFN8 (3x3) ................................................ 2.5W will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry Junction Temperature ............................... 150 C protects the device from permanent damage. Lead Temperature .................................... 260 C 3) The device is not guaranteed to function outside of its Storage Temperature ............... -65C to +150 C operating conditions. 4) Measured on JESD51-7, 4-layer PCB. (3) Recommended Operating Conditions Supply Voltage V ..................... +9.0V to 16.0V DD SW Voltage (V ) .................. -1.0V to 100V-V SW DD SW slew rate ...................................... <50V/nsec Operating Junct. Temp (T ) ...... -40C to +125 C J MP18021 Rev. 1.12 www.MonolithicPower.com 2 6/14/2018 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2018 MPS. All Rights Reserved.