Product Information

BSS84AKS,115

BSS84AKS,115 electronic component of Nexperia

Datasheet
Mosfet Array 2 P-Channel (Dual) 50V 160mA 445mW Surface Mount 6-TSSOP
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3795 ea
Line Total: USD 0.38

44806 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 1

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BSS84AKS,115
Nexperia

3000 : USD 0.0513

5829 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 5
Multiples : 5

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BSS84AKS,115
Nexperia

5 : USD 0.1038
50 : USD 0.0844
150 : USD 0.0747
500 : USD 0.0672
3000 : USD 0.0614
6000 : USD 0.0585

44806 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

BSS84AKS,115
Nexperia

1 : USD 0.3795
10 : USD 0.2265
100 : USD 0.1058
1000 : USD 0.0759
3000 : USD 0.0598
9000 : USD 0.0552
24000 : USD 0.0529
45000 : USD 0.0495
99000 : USD 0.0483

448140 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

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BSS84AKS,115
Nexperia

3000 : USD 0.0494

90210 - WHS 5


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

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BSS84AKS,115
Nexperia

3000 : USD 0.0515

1409 - WHS 6


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 145
Multiples : 1

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BSS84AKS,115
Nexperia

145 : USD 0.0764
250 : USD 0.0749

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Category
Brand Category
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Additional Infomation About Product

BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor drain-source voltage T=25C ---50 V V DS j gate-source voltage -20 - 20 V V GS 1 drain current V =-10 V T =25C ---160mA I D GS amb Static characteristics (per transistor) drain-source on-state V =-10 V I = -100 mA -4.5 7.5 R DSon GS D resistance T =25C j 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .BSS84AKS Nexperia 50 V, 160 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source 1 6 5 D1 D2 4 2 G1 gate 1 3D2 drain 2 4S2 source 2 G1 G2 132 5 G2 gate 2 SOT363 (TSSOP6) 6D1 drain 1 S1 S2 sym147 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AKS TSSOP6 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code BSS84AKS %VY 1 % = placeholder for manufacturing site code BSS84AKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 23 May 2011 2 of 17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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