BSS84TA Diodes Incorporated

SOT23 P-CHANNEL ENHANCEMENT BSS84 MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 1995 PARTMARKING DETAIL SP S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V -50 V DS Continuous Drain Current I -130 mA D Pulsed Drain Current I -520 mA DM Gate-Source Voltage Peak V V 20 GS Power Dissipation at T =25C P 360 mW amb TOT Operating and Storage Temperature Range t :t -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source BV -50 V V =0V, I =0.25mA DSS GS D Breakdown Voltage Gate-Source V -0.8 -1.5 -2.0 V V =V , I =-1mA GS(th) DS GS D Threashold Voltage Zero gate Voltage I -1 -15 A T =25 C DSS j Drain Current -2 -60 T =125 C A j V =-50V, V =0V(2) DS GS T =25 C j -100 V =-25V, V =0V DS GS Gate-Source Leakage I -1 -10 nA V = 20V GSS GS Current V =0V DS Drain Source On-State R 610 V =-5V DS(on) GS Resistance (1) I =-100mA D Forward g 0.05 0.07 S V =-25V fs DS Transconductance (1) I =-100mA D (2) Input Capacitance (2) C 40 V =0V iss GS V =-25V DS Output Capacitance C 15 oss pF f=1MHz Reverse Transfer C 6 rss Capacitance (2) Turn-On Time t td(on) 10 V =-30V on DD I =-0.27A D t 10 r ns V =-10V GS Turn-Off Time t t 18 R =50 GS off d(off) t 25 f * (1) Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% (2) Sample test. 3 - 69