Document Number: MRF7S15100H
Freescale Semiconductor
Rev. 2, 6/2009
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S15100HR3
Designed for CDMA base station applications with frequencies from 1470 to
MRF7S15100HSR3
1510 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
Typical Single-Carrier W-CDMA Performance: V = 28 Volts, I =
DD DQ
600 mA, P = 23 Watts Avg., f = 1507.5 MHz, IQ Magnitude Clipping,
out
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
1470-1510 MHz, 23 W AVG., 28 V
Probability on CCDF.
SINGLE W-CDMA
Power Gain 19.5 dB
Drain Efficiency 32% LATERAL N-CHANNEL
Device Output Signal PAR 6.2 dB @ 0.01% Probability on CCDF
RF POWER MOSFETs
ACPR @ 5 MHz Offset -38 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW
Output Power
Typical P @ 1 dB Compression Point 100 Watts CW
out
Features
100% PAR Tested for Guaranteed Output Power Capability
CASE 465-06, STYLE 1
Characterized with Series Equivalent Large-Signal Impedance Parameters
NI-780
Internally Matched for Ease of Use
MRF7S1500HR3
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
Optimized for Doherty Applications
RoHS Compliant
CASE 465A-06, STYLE 1
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
NI-780S
MRF7S1500HSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V -0.5, +65 Vdc
DSS
Gate-Source Voltage V -6.0, +10 Vdc
GS
Operating Voltage V 32, +0 Vdc
DD
Storage Temperature Range T - 65 to +150 C
stg
Case Operating Temperature T 150 C
C
(1,2)
Operating Junction Temperature T 225 C
J
CW Operation @ T = 25C CW 75 W
A
Derate above 25C 0.36 W/C
Table 2. Thermal Characteristics
(2,3)
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R C/W
JC
Case Temperature 80C, 55 W CW 0.65
Case Temperature 77C, 23 W CW 0.74
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1C (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V = 65 Vdc, V = 0 Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 1 Adc
DSS
(V = 28 Vdc, V = 0 Vdc)
DD GS
Gate-Source Leakage Current I 1 Adc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS DS
On Characteristics
Gate Threshold Voltage V 1.2 2 2.7 Vdc
GS(th)
(V = 10 Vdc, I = 174 Adc)
DS D
Gate Quiescent Voltage V 2 2.7 3.5 Vdc
GS(Q)
(V = 28 Vdc, I = 600 mAdc, Measured in Functional Test)
DD D
Drain-Source On-Voltage V 0.1 0.2 0.3 Vdc
DS(on)
(V = 10 Vdc, I = 1.74 Adc)
GS D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance C 0.6 pF
rss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS GS
Output Capacitance C 300 pF
oss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS GS
Input Capacitance C 176 pF
iss
(V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 600 mA, P = 23 W Avg., f = 1507.5 MHz, Single-Carrier
DD DQ out
W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset.
Power Gain G 18 19.5 21 dB
ps
Drain Efficiency 30 32 %
D
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF PAR 5.9 6.2 dB
Adjacent Channel Power Ratio ACPR -38 -35 dBc
Input Return Loss IRL -15 -8 dB
1. Part internally matched both on input and output. (continued)
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
2