PMBFJ112,215 NXP

PMBFJ111 PMBFJ112 PMBFJ113 N-channel junction FETs Rev. 4 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits High-speed switching Interchangeability of drain and source connections Low R at zero gate voltage (< 30 for PMBFJ111). DSon 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1. Pinning 1 Pin Description Simplified outline Symbol 1drain 3 2source 3gate 1 3 2 12 sym053 1 Drain and source are interchangeable. SOT23PMBFJ111 PMBFJ112 PMBFJ113 NXP Semiconductors N-channel junction FETs 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3. Marking 1 Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBFJ113 47* 1 * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 40 V DS V gate-source voltage - 40 V GSO V gate-drain voltage - 40 V GDO I forward gate current (DC) - 50 mA G 1 P total power dissipation T = 25 C -300 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j 1 Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 6. Thermal characteristics Table 5. Thermal characteristics T = P (R +R +R )+T . j th(j-t) th(t-s) th(s-a) amb Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to ambient 430 K/W th(j-a) 2 thermal resistance from junction to ambient 500 K/W 1 Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 2 Mounted on printed circuit board. PMBFJ111 112 113 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 20 September 2011 2 of 9