Product Information

PMBFJ113,215

PMBFJ113,215 electronic component of NXP

Datasheet
RF JFET Transistors TAPE7 FET-RFSS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2432 ea
Line Total: USD 729.6

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3000
Multiples : 1
3000 : USD 0.2432

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Brand
Gate-Source Cutoff Voltage
Rds On - Drain-Source Resistance
Factory Pack Quantity :
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PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 4 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits High-speed switching Interchangeability of drain and source connections Low R at zero gate voltage (< 30 for PMBFJ111). DSon 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1. Pinning [1] Pin Description Simplified outline Symbol 1drain 3 2source 3gate 1 3 2 12 sym053 [1] Drain and source are interchangeable. SOT23PMBFJ111; PMBFJ112; PMBFJ113 NXP Semiconductors N-channel junction FETs 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3. Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBFJ113 47* [1] * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 40 V DS V gate-source voltage - 40 V GSO V gate-drain voltage - 40 V GDO I forward gate current (DC) - 50 mA G [1] P total power dissipation T = 25 C -300 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j [1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 6. Thermal characteristics Table 5. Thermal characteristics T = P (R +R +R )+T . j th(j-t) th(t-s) th(s-a) amb Symbol Parameter Conditions Typ Unit [1] R thermal resistance from junction to ambient 430 K/W th(j-a) [2] thermal resistance from junction to ambient 500 K/W [1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. [2] Mounted on printed circuit board. PMBFJ111_112_113 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 20 September 2011 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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