X-On Electronics has gained recognition as a prominent supplier of DB3 DIACS across the USA, India, Europe, Australia, and various other global locations. DB3 DIACS are a product manufactured by ON Semiconductor. We provide cost-effective solutions for DIACS, ensuring timely deliveries around the world.

DB3 ON Semiconductor

DB3 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.DB3
Manufacturer: ON Semiconductor
Category: Diacs
Description: Diacs 32 Volt Trigger
Datasheet: DB3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.118 ea
Line Total: USD 0.12

Availability - 0
Ships to you by
Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3613
10 : USD 0.3399
25 : USD 0.3399
50 : USD 0.3399

0 - WHS 2


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 7599
Multiples : 7599
7599 : USD 0.0571

0 - WHS 3


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.6945
10 : USD 0.577
100 : USD 0.128
500 : USD 0.0812
1000 : USD 0.0556
5000 : USD 0.0428

0 - WHS 4


Ships to you by Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.118
10 : USD 0.059
50 : USD 0.0531
250 : USD 0.0443
500 : USD 0.0398

   
Manufacturer
Product Category
Series
Breakover Voltage VBO
Breakover Current IBO Max
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
Off-State Capacitance Co
Off-State Leakage Current Vdrm Idrm
Brand
Maximum Operating Temperature
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the DB3 from our Diacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DB3 and other electronic components in the Diacs category and beyond.

DB3, DB4, SMDB3 Datasheet Diac Features V : 32 V and 40 V BO Low breakover current DO-35 Breakover voltage symmetry : 3V ECOPACK 2 compliant 2 Applications 3 Triggering device for Triac or SCR based motor / light dimmer 1 SOT-23 32 V trigger device for oscillator circuit Pin 1 and 3 must be shorted Start up triggering in lighting ballast for CFL, TL or LED lamps together Description Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. The surface mount SOT23-3L package allows compact, SMD based designs for automated manufacturing. Product status link DB3 DB4 SMDB3 Product summary V Part number BO SMDB3 28 - 36 V DB3 28 - 36 V DB4 35 - 45 V DS2125 - Rev 3 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.DB3, DB4, SMDB3 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit SMDB3 1.00 A I Repetitive peak on-state current, t = 20 s, F = 120 Hz TRM p DB3 / DB4 2.00 A T Storage junction temperature range -40 to +125 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Parameter Test conditions SMDB3 DB3 DB4 Unit Min. 28 28 35 (1) (2) V Breakover voltage C = 10 nF Typ. 32 32 40 V BO Max. 36 36 45 (2) I V - V I Breakover voltage symmetry Max. 3 3 3 V BO1 BO2 C = 10 nF (1) V V and V at 10 mA Min. 10 5 5 V Dynamic breakover voltage BO F (1) V See Figure 2. Test circuit, (R = 20 ) Min. 10 5 5 V O Output voltage (1) (2) I Max. 10 50 50 A BO Breakover current C = 10 nF (1) t See Figure 3. Rise time measurement Max. 0.5 2 2 s r Rise time (1) I V = 0.5 x V max Max. 1 10 10 A R Leakage current R BO (1) I Peak current See Figure 2. Test circuit Min. 1 0.30 0.30 A P 1. Applicable to both forward and reverse directions. 2. Connected in parallel to the device DS2125 - Rev 3 page 2/11

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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