DB3 STMicroelectronics

DB3 electronic component of STMicroelectronics
DB3 STMicroelectronics
DB3 Diacs
DB3 Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DB3 Diacs across the USA, India, Europe, Australia, and various other global locations. DB3 Diacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Diacs, ensuring timely deliveries around the world.

Part No. DB3
Manufacturer: STMicroelectronics
Category: Diacs
Description: Diacs Trigger Diode 28 ~ 36V 100uA 2A DO-35 RoHS
Datasheet: DB3 Datasheet (PDF)
Price (USD)
20: USD 0.074 ea
Line Total: USD 1.48 
Availability : 96980
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
20$ 0.074
200$ 0.0606
600$ 0.0398
5000$ 0.03
10000$ 0.0274
20000$ 0.0259

Availability 58200
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 10000
Multiples : 5000
QtyUnit Price
10000$ 0.0299
15000$ 0.0292
25000$ 0.0278
75000$ 0.0272
125000$ 0.0266


Availability 1292
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.28
5$ 0.2296
10$ 0.1988
100$ 0.1106
500$ 0.0742


Availability 96980
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.074
200$ 0.0606
600$ 0.0398
5000$ 0.03
10000$ 0.0274
20000$ 0.0259


Availability 17906
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 3022
Multiples : 1
QtyUnit Price
3022$ 0.0861
3059$ 0.085
4229$ 0.0615
5556$ 0.0468
5682$ 0.0457
6000$ 0.0446
15000$ 0.0418


Availability 33950
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 20000
Multiples : 5000
QtyUnit Price
20000$ 0.0399
25000$ 0.0335


Availability 24250
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 10000
Multiples : 5000
QtyUnit Price
10000$ 0.0485
10000$ 0.0408
25000$ 0.0316

   
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Type Of Semiconductor Component
Max Load Current
Breakover Voltage
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the DB3 from our Diacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DB3 and other electronic components in the Diacs category and beyond.

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DB3 DB4 SMDB3 DIAC FEATURES n V : 32V and 40V BO n LOW BREAKOVER CURRENT DO-35 DESCRIPTION (DB3 and DB4) Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorenscent 2 lamp ballasts. 3 A new surface mount version is now available in 1 SOT-23 package, providing reduced space and compatibility with automatic pick and place SOT-23 equipment. (SMDB3)* Pin 1 and 3 must be shorted together ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter Value Unit I Repetitive peak on-state current SMDB3 1.00 A TRM tp=20 s F= 120 Hz DB3 / DB4 2.00 Tstg Storage temperature range -40to+125 C Tj Operating junction temperature range Note: * SMDB3 indicated as Preliminary spec as product is still in development stage. 1/5 October 2001 - Ed: 2BDB3 DB4 SMDB3 ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise specified) Symbol Parameter Test Conditions SMDB3 DB3 DB4 Unit V Breakover voltage * C = 22nF ** MIN. 28 28 35 V BO TYP. 32 32 40 MAX. 36 36 45 IV -V I Breakover voltage C = 22nF ** MAX. 3 V BO1 BO2 symmetry V Dynamic breakover V and V at 10mA MIN. 10 5 V BO F voltage * V Output voltage * see diagram 2 MIN. 10 5 V O (R=20) I Breakover current * C = 22nF ** MAX. 10 50 A BO tr Rise time * see diagram 3 MAX. 0.50 2 s I Leakage current * V = 0.5 V max MAX. 1 10 A R R BO I Peak current * see diagram 2 (Gate) MIN. 1 0.30 A P * Applicable to both forward and reverse directions. ** Connected in parallel to the device. PRODUCT SELECTOR Part Number V Package BO SMDB3 28 - 36 SOT-23 DB3 28 - 36 DO-35 DB4 35 - 45 DO-35 ORDERING INFORMATION SM DB 3 Surface Breakover voltage Mount 3: VBO typ = 32V Version 4: VBO typ = 40V Diac Series 2/5

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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