Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA1430JP Integrated P-Channel PowerTrench MOSFET and BJT July 2014 FDMA1430JP Integrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 m Features General Description This device is designed specifically as a single package solution Max r = 90 m at V = -4.5 V, I = -2.9 A DS(on) GS D for loadswitching in cellular handset and other ultra-portable Max r = 130 m at V = -2.5 V, I = -2.6 A DS(on) GS D applications. It features a 50 V NPN BJT and a 30 V P-ch Trench MOSFET in the space saving MicroFET 2x2 package that offers Max r = 170 m at V = -1.8 V, I = -1.7 A DS(on) GS D exceptional thermal performance for it s physical size and is well Max r = 240 m at V = -1.5 V, I = -1 A suited to linear mode applications. DS(on) GS D Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 Application HBM ESD protection level > 2 kV typical (Note 3) Loadswitching RoHS Compliant EB D PIN 1 E C CD B G S D CG S Top Bottom MicroFET 2x2 Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage 8 V GS Drain Current -Continuous T = 25C (Note 1a) -2.9 A I A D -Pulsed -12 V Collector-Base Voltage (Note 4) 50 V CBO V Collector-Emitter Voltage (Note 5) 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 C J Power Dissipation T = 25C (Note 1a) 1.5 A P W D T = 25C (Note 1b) 0.7 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient(MOSFET) (Note 1a) 86 JA C/W R Thermal Resistance, Junction to Ambient(MOSFET) (Note 1b) 173 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 143 FDMA1430JP MicroFET 2x2 7 8 mm 5000 units www.fairchildsemi.com 2013 Fairchild Semiconductor Corporation 1 FDMA1430JP Rev.C2