Product Information

FDMA3023PZ

FDMA3023PZ electronic component of ON Semiconductor

Datasheet
MOSFET 30V 2.9A Dual P Ch PowerTrench

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1348: USD 0.2344 ea
Line Total: USD 315.97

0 - Global Stock
MOQ: 1348  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 3000
Multiples : 3000

Stock Image

FDMA3023PZ
ON Semiconductor

3000 : USD 0.3991
6000 : USD 0.3695
9000 : USD 0.3695
12000 : USD 0.3695
15000 : USD 0.3695

0 - WHS 2


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1348
Multiples : 1

Stock Image

FDMA3023PZ
ON Semiconductor

1348 : USD 0.2344

0 - WHS 3


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

FDMA3023PZ
ON Semiconductor

1 : USD 2.2265
10 : USD 0.8155
100 : USD 0.6006
500 : USD 0.4743
1000 : USD 0.3801
3000 : USD 0.3428
6000 : USD 0.3335

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Product
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA3023PZ Dual P-Channel PowerTrench MOSFET July 2014 FDMA3023PZ Dual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 m Features General Description This device is designed specifically as a single package solution Max r = 90 m at V = -4.5 V, I = -2.9 A DS(on) GS D for the battery charge switch in cellular handset and other Max r = 130 m at V = -2.5 V, I = -2.6 A DS(on) GS D ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum Max r = 170 m at V = -1.8 V, I = -1.7 A DS(on) GS D conduction losses. When connected in the typical common Max r = 240 m at V = -1.5 V, I = -1.0 A source configuration, bi-directional current flow is possible. DS(on) GS D Low profile - 0.8 mm maximum - in the new package MicroFET The MicroFET 2X2 package offers exceptional thermal 2x2 mm performance for its physical size and is well suited to linear mode applications. HBM ESD protection level > 2 kV (Note 3) RoHS Compliant Free from halogenated compounds and antimony oxides PIN 1 S1 G1 D2 S1 1 6 D1 111111 666666 D1 D2 G1 2 G2 5 222222 555555 D2 3 4 S2 333333 444444 D1 G2 S2 MicroFET 2x2 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage 8 V GS Drain Current -Continuous (Note 1a) -2.9 I A D -Pulsed -6 Power Dissipation (Note 1a) 1.4 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 JA R Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 JA C/W R Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 JA R Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 323 FDMA3023PZ MicroFET 2X2 7 8 mm 3000 units 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMA3023PZ Rev.C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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ON Semicon
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ON SEMICONDUCTOR (FAIRCHILD)
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