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FDMA507PZ Single P-Channel PowerTrench MOSFET May 2010 FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 m Features General Description This device is designed specifically for battery charge or load Max r = 24 m at V = -5 V, I = -7.8 A DS(on) GS D switching in cellular handset and other ultraportable applications. Max r = 25 m at V = -4.5 V, I = -7 A DS(on) GS D It features a MOSFET with low on-stade resistance. Max r = 35 m at V = -2.5 V, I = -5.5 A DS(on) GS D The MicroFET 2X2 package offers exceptional thermal Max r = 45 m at V = -1.8 V, I = -4 A perfomance for its physical size and is well suited to linear mode DS(on) GS D applications. Low Profile - 0.8 mm maximum - in the package MicroFET 2X2 mm HBM ESD protection level > 3.2K V typical (Note3) Free from halogenated compounds and antimony oxides RoHS Compliant MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS I Drain Current -Continuous T = 25 C (Note 1a) -7.8 D A A -Pulsed -24 Power Dissipation T = 25 C (Note 1a) 2.4 A P W D Power Dissipation T = 25 C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 52 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 145 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 507 FDMA507PZ MicroFET 2X2 7 12 mm 3000 units 1 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMA507PZ Rev.C