MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 (TO236) These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 318 Compliant STYLE 6 MAXIMUM RATINGS COLLECTOR 3 Rating Symbol Value Unit BASE 1 CollectorEmitter Voltage V 30 Vdc CES CollectorBase Voltage V 30 Vdc CBO EMITTER 2 EmitterBase Voltage V 10 Vdc EBO MARKING DIAGRAM Collector Current Continuous I 500 mAdc C THERMAL CHARACTERISTICS 2x M Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P D 1 (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 2x = Device Code Thermal Resistance, JunctiontoAmbient R 556 C/W JA x = U for MMBTA63LT1G x = V for MMBTA64LT1G Total Device Dissipation P D SMMBTA64LT1G Alumina Substrate, (Note 2) T = 25C 300 mW M = Date Code* A Derate above 25C 2.4 mW/C = PbFree Package (Note: Microdot may be in either location) Thermal Resistance, JunctiontoAmbient R 417 C/W JA *Date Code orientation and/or overbar may Junction and Storage Temperature T , T 55 to +150 C J stg vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. Device Package Shipping 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. MMBTA63LT1G SOT23 3,000 / Tape & Reel (PbFree) MMBTA64LT1G SOT23 3,000 / Tape & Reel (PbFree) SMMBTA64LT1G SOT23 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 6 MMBTA63LT1/DMMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 100 Adc) 30 C Collector Cutoff Current I nAdc CBO (V = 30 Vdc) 100 CB Emitter Cutoff Current I nAdc EBO (V = 10 Vdc) 100 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mAdc, V = 5.0 Vdc) C CE MMBTA63 5,000 (I = 10 mAdc, V = 5.0 Vdc) C CE MMBTA64, SMMBTA64 10,000 (I = 100 mAdc, V = 5.0 Vdc) C CE MMBTA63 10,000 (I = 100 mAdc, V = 5.0 Vdc) C CE MMBTA64, SMMBTA64 20,000 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 0.1 mAdc) 1.5 C B Base Emitter On Voltage V Vdc BE(on) (I = 100 mAdc, V = 5.0 Vdc) 2.0 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 125 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2