X-On Electronics has gained recognition as a prominent supplier of MMBTA64LT3G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. MMBTA64LT3G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

MMBTA64LT3G ON Semiconductor

MMBTA64LT3G electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBTA64LT3G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Trans Darlington PNP 30V 0.5A Automotive 3-Pin SOT-23 T/R
Datasheet: MMBTA64LT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1069 ea
Line Total: USD 0.11 
Availability - 18057
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
18057
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1069
10 : USD 0.077
100 : USD 0.0402
1000 : USD 0.0322
2500 : USD 0.0287
10000 : USD 0.0265
20000 : USD 0.023
50000 : USD 0.0207
100000 : USD 0.0207

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBTA64LT3G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTA64LT3G and other electronic components in the Darlington Transistors category and beyond.

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MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 (TO236) These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 318 Compliant STYLE 6 MAXIMUM RATINGS COLLECTOR 3 Rating Symbol Value Unit BASE 1 CollectorEmitter Voltage V 30 Vdc CES CollectorBase Voltage V 30 Vdc CBO EMITTER 2 EmitterBase Voltage V 10 Vdc EBO MARKING DIAGRAM Collector Current Continuous I 500 mAdc C THERMAL CHARACTERISTICS 2x M Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P D 1 (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 2x = Device Code Thermal Resistance, JunctiontoAmbient R 556 C/W JA x = U for MMBTA63LT1G x = V for MMBTA64LT1G Total Device Dissipation P D SMMBTA64LT1G Alumina Substrate, (Note 2) T = 25C 300 mW M = Date Code* A Derate above 25C 2.4 mW/C = PbFree Package (Note: Microdot may be in either location) Thermal Resistance, JunctiontoAmbient R 417 C/W JA *Date Code orientation and/or overbar may Junction and Storage Temperature T , T 55 to +150 C J stg vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. Device Package Shipping 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. MMBTA63LT1G SOT23 3,000 / Tape & Reel (PbFree) MMBTA64LT1G SOT23 3,000 / Tape & Reel (PbFree) SMMBTA64LT1G SOT23 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 6 MMBTA63LT1/DMMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 100 Adc) 30 C Collector Cutoff Current I nAdc CBO (V = 30 Vdc) 100 CB Emitter Cutoff Current I nAdc EBO (V = 10 Vdc) 100 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mAdc, V = 5.0 Vdc) C CE MMBTA63 5,000 (I = 10 mAdc, V = 5.0 Vdc) C CE MMBTA64, SMMBTA64 10,000 (I = 100 mAdc, V = 5.0 Vdc) C CE MMBTA63 10,000 (I = 100 mAdc, V = 5.0 Vdc) C CE MMBTA64, SMMBTA64 20,000 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 0.1 mAdc) 1.5 C B Base Emitter On Voltage V Vdc BE(on) (I = 100 mAdc, V = 5.0 Vdc) 2.0 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 125 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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