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E Sourced from process 42. SOT-23 B Mark: 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Emitter Voltage 40 V CEO Collector-Base Voltage 40 V V CBO Emitter-Base Voltage 4.0 V V EBO I Collector Current - Continuous 50 mA C , T Operating and Storage Junction Temperature Range -55 ~ 150 C T J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = 1.0 mA, I = 0 40 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 A, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 1.0 A, I = 0 4.0 V (BR)EBO E C I Collector Cutoff Current V = 30 V, I = 0 100 nA CBO CB E On Characteristics h DC Current Gain I = 1.0 mA, V = 6.0 V 50 120 V FE C CE V Collector-Emitter Saturation Voltage I = 10 mA, I = 5.0 mA 0.2 V CE(sat) C B Small Signal Characteristics f Current Gain - Bandwidth Product I = 2.0 mA, V = 10 V, 450 MHz T C CE f = 100 MHz C Collector-Base Capacitance V = 10 V, I = 0, f = 1.0 MHz 0.6 pF cb CB E = 5.0 mA, V = 10 V, 12 pS rbCc Collector Base Time Constant I C CB f = 79.8 MHz * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Thermal Characteristics T =25C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 225 mW D Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient 556 C/W R JA *Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 2004 Fairchild Semiconductor Corporation Rev. A, April 2004