MMBTH10M3T5G ON Semiconductor

MMBTH10M3T5G electronic component of ON Semiconductor
MMBTH10M3T5G ON Semiconductor
MMBTH10M3T5G Bipolar Transistors - BJT
MMBTH10M3T5G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBTH10M3T5G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTH10M3T5G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBTH10M3T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 25V Automotive 3-Pin SOT-723 T/R
Datasheet: MMBTH10M3T5G Datasheet (PDF)
Price (USD)
16000: USD 0.0277 ea
Line Total: USD 443.2 
Availability : 23280
  
Ship by Fri. 22 Aug to Thu. 28 Aug
QtyUnit Price
16000$ 0.0277

Availability 4825
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1375
10$ 0.0775
100$ 0.0588
8000$ 0.0484
24000$ 0.044


Availability 4428
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 1603
Multiples : 1
QtyUnit Price
1603$ 0.1911
2539$ 0.1024


Availability 23280
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 16000
Multiples : 8000
QtyUnit Price
16000$ 0.0277


Availability 15520
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 16000
Multiples : 16000
QtyUnit Price
16000$ 0.0462
24000$ 0.0447
48000$ 0.0429
96000$ 0.0416


Availability 14197
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 8380
Multiples : 1
QtyUnit Price
8380$ 0.056
10000$ 0.0499
100000$ 0.0418

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBTH10M3T5G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTH10M3T5G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spinoff of our popular SOT 23 threeleaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT723 surface mount package. This device is ideal for low power surface mount applications where board space is at a premium. MMBTH10M3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 25 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 30 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 3.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I 100 nAdc CBO (V = 25 Vdc, I = 0) CB E Emitter Cutoff Current I 100 nAdc EBO (V = 2.0 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 4.0 mAdc, V = 10 Vdc) 60 C CE CollectorEmitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 4.0 mAdc, I = 0.4 mAdc) C B BaseEmitter On Voltage V 0.95 Vdc BE (I = 4.0 mAdc, V = 10 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 4.0 mAdc, V = 10 Vdc, f = 100 MHz) 650 C CE Collector Base Capacitance C 0.7 pF cb (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Common Base Feedback Capacitance C 0.65 pF rb (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Collector Base Time Constant rbC 9.0 ps c (I = 4.0 mAdc, V = 10 Vdc, f = 31.8 MHz) C CB

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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