MMBTH81 ON Semiconductor

MMBTH81 electronic component of ON Semiconductor
MMBTH81 ON Semiconductor
MMBTH81 RF Bipolar Transistors
MMBTH81  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBTH81 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MMBTH81 RF Bipolar Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

Part No. MMBTH81
Manufacturer: ON Semiconductor
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors PNP RF Transistor
Datasheet: MMBTH81 Datasheet (PDF)
Price (USD)
6000: USD 0.0485 ea
Line Total: USD 291 
Availability : 148410
  
Ship by Wed. 13 Aug to Tue. 19 Aug
QtyUnit Price
6000$ 0.0485
9000$ 0.0473
12000$ 0.0471
30000$ 0.0442
45000$ 0.0433

Availability 148410
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0485
9000$ 0.0473
12000$ 0.0471
30000$ 0.0442
45000$ 0.0433


Availability 470
Ship by Wed. 20 Aug to Mon. 25 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1894
50$ 0.1494
150$ 0.1292
500$ 0.0771
3000$ 0.0645
6000$ 0.0606


Availability 487
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.238
5$ 0.1932
10$ 0.1694
25$ 0.1414
50$ 0.1246


Availability 58200
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0598
6000$ 0.0581
12000$ 0.0534
27000$ 0.0518
51000$ 0.0508

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Type
Width
Brand
Gain Bandwidth Product Ft
Maximum Dc Collector Current
Factory Pack Quantity :
Brand Category
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We are delighted to provide the MMBTH81 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTH81 and other electronic components in the RF Bipolar Transistors category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MPSH81 / MMBTH81 MPSH81 MMBTH81 C E TO-92 C B E SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 20 V CEO V Collector-Base Voltage 20 V CBO V Emitter-Base Voltage 3.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSH81 *MMBTH81 P Total Device Dissipation 350 225 mW D Derate above 25 C 2.8 1.8 mW/ C Thermal Resistance, Junction to Case 125 R C/W JC R Thermal Resistance, Junction to Ambient 357 556 C/W JA *Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 1997 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 2 MPSH81/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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