Product Information

MMBTH81

MMBTH81 electronic component of ON Semiconductor

Datasheet
RF Bipolar Transistors PNP RF Transistor

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0975 ea
Line Total: USD 0.98

1600 - Global Stock
Ships to you between
Thu. 25 Apr to Wed. 01 May
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
35171 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 7
Multiples : 1

Stock Image

MMBTH81
ON Semiconductor

7 : USD 4.25
25 : USD 3.375
100 : USD 1.3375
500 : USD 1.225
1000 : USD 1.1375
3000 : USD 1.0625
6000 : USD 1

201 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 1
Multiples : 1

Stock Image

MMBTH81
ON Semiconductor

1 : USD 0.1363
10 : USD 0.0709
25 : USD 0.0695
100 : USD 0.0695
250 : USD 0.0695

1513 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 10
Multiples : 10

Stock Image

MMBTH81
ON Semiconductor

10 : USD 0.0975
50 : USD 0.0871
240 : USD 0.0702
640 : USD 0.0663
3000 : USD 0.065

201 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 157
Multiples : 1

Stock Image

MMBTH81
ON Semiconductor

157 : USD 0.0695

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Type
Width
Brand
Gain Bandwidth Product Ft
Maximum Dc Collector Current
Factory Pack Quantity :
Brand Category
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
MMBZ16VALT1G electronic component of ON Semiconductor MMBZ16VALT1G

ON Semiconductor TVS Diodes - Transient Voltage Suppressors ZENER SOT23 5% VZ TOLERAN
Stock : 6000

MMBZ15VDLT3G electronic component of ON Semiconductor MMBZ15VDLT3G

ESD Suppressors / TVS Diodes 15V 225mW Dual Common Cathode
Stock : 286500

MMBZ15VDLT1G electronic component of ON Semiconductor MMBZ15VDLT1G

ESD Suppressors / TVS Diodes 15V 225mW Dual Common Cathode
Stock : 268196

MMBV3700LT1G electronic component of ON Semiconductor MMBV3700LT1G

PIN Diodes 200V 1pF
Stock : 0

MMBV3102LT1G electronic component of ON Semiconductor MMBV3102LT1G

Varactor Diodes 30V 20pF
Stock : 0

MMBZ18VALT1 electronic component of ON Semiconductor MMBZ18VALT1

ESD Suppressors / TVS Diodes 18V 225mW Dual
Stock : 0

MMBZ15VALT1G electronic component of ON Semiconductor MMBZ15VALT1G

ESD Suppressors / TVS Diodes 15V 225mW Dual Common Anode
Stock : 24000

MMBV3401LT1G electronic component of ON Semiconductor MMBV3401LT1G

PIN Diodes 35V 1pF
Stock : 845

MMBV105GLT1G electronic component of ON Semiconductor MMBV105GLT1G

Varactor Diodes 30V 1.5pF
Stock : 0

MMBZ12VALT1G electronic component of ON Semiconductor MMBZ12VALT1G

ESD Suppressors / TVS Diodes 12V Dual Zener Common Anode
Stock : 56202

Image Description
MMDT2227-7-F electronic component of Diodes Incorporated MMDT2227-7-F

Transistors Bipolar - BJT 40 / 60V 200mW
Stock : 43320

MMDT2227M-7 electronic component of Diodes Incorporated MMDT2227M-7

Transistors Bipolar - BJT BIPOLAR TRANSISTOR NPN/PNP SOT-26
Stock : 3000

MMDT5401-7-F electronic component of Diodes Incorporated MMDT5401-7-F

Transistors Bipolar - BJT -150V 200mW
Stock : 3000

MMDT5401-TP electronic component of Micro Commercial Components (MCC) MMDT5401-TP

Transistors Bipolar - BJT -200mA -150V
Stock : 2943

MMDT5451-7-F electronic component of Diodes Incorporated MMDT5451-7-F

Transistors Bipolar - BJT 160 / 160V 200mW
Stock : 69000

MMDT5551-TP electronic component of Micro Commercial Components (MCC) MMDT5551-TP

Transistors Bipolar - BJT 200mA 160V
Stock : 18000

BFN 26 E6327 electronic component of Infineon BFN 26 E6327

Infineon Technologies Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
Stock : 26468

TTC012(Q) electronic component of Toshiba TTC012(Q)

Toshiba Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V
Stock : 0

BFP760H6327 electronic component of Infineon BFP760H6327

Transistor: NPN; bipolar; RF; 4V; 70mA; 240mW; SOT343
Stock : 1000

BFP760H6327XTSA1 electronic component of Infineon BFP760H6327XTSA1

Infineon Technologies RF Bipolar Transistors
Stock : 735

ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MPSH81 / MMBTH81 MPSH81 MMBTH81 C E TO-92 C B E SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 20 V CEO V Collector-Base Voltage 20 V CBO V Emitter-Base Voltage 3.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSH81 *MMBTH81 P Total Device Dissipation 350 225 mW D Derate above 25 C 2.8 1.8 mW/ C Thermal Resistance, Junction to Case 125 R C/W JC R Thermal Resistance, Junction to Ambient 357 556 C/W JA *Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 1997 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 2 MPSH81/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted