X-On Electronics has gained recognition as a prominent supplier of NTR4003NT3G mosfet across the USA, India, Europe, Australia, and various other global locations. NTR4003NT3G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTR4003NT3G ON Semiconductor

NTR4003NT3G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTR4003NT3G
Manufacturer: ON Semiconductor
Category:MOSFET
Description: ON Semiconductor MOSFET NFET 30V .56A 1500M
Datasheet: NTR4003NT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0581 ea
Line Total: USD 581

Availability - 9700
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
9700 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.0581
20000 : USD 0.0464
50000 : USD 0.0435

18100 - WHS 2


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1516
50 : USD 0.1137
150 : USD 0.0975
500 : USD 0.0772
2500 : USD 0.0682
5000 : USD 0.0628

9700 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.0582

48500 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.0846

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NTR4003NT3G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTR4003NT3G and other electronic components in the MOSFET category and beyond.

NTR4003N, NVR4003N MOSFET Single, N-Channel, Small Signal, SOT-23 30 V, 0.56 A www.onsemi.com Features Low Gate Voltage Threshold (V ) to Facilitate Drive Circuit GS(TH) V R TYP I MAX (BR)DSS DS(on) D Design Low Gate Charge for Fast Switching 1.0 4.0 V 30 V 0.56 A ESD Protected Gate 1.5 2.5 V SOT23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V NChannel NVR Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 1 Applications Notebooks: Level Shifters 2 Logic Switches Low Side Load Switches MARKING DIAGRAM/ Portable Applications PIN ASSIGNMENT 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J 3 Drain Parameter Symbol Value Unit 1 DraintoSource Voltage V 30 V DSS 2 TR8 M GatetoSource Voltage V 20 V GS SOT23 Continuous Drain Steady T = 25C I 0.5 A A D Current (Note 1) State CASE 318 T = 85C 0.37 A STYLE 21 1 2 Power Dissipation Steady State P 0.69 W Gate Source D (Note 1) TR8 = Specific Device Code Continuous Drain t < 10 s T = 25C I 0.56 A M = Date Code A D Current (Note 1) = PbFree Package T = 85C 0.40 A (Note: Microdot may be in either location) Power Dissipation t < 5 s P 0.83 W D (Note 1) *Date Code orientation and overbar may vary depending upon manufacturing location. Pulsed Drain Current t = 10 s I 1.7 A p DM Operating Junction and Storage Temperature T , 55 to C J 150 ORDERING INFORMATION Tstg Source Current (Body Diode) I 1.0 A S Device Package Shipping Lead Temperature for Soldering Purposes T 260 C L NTR4003NT1G SOT23 3000 / Tape & Reel (1/8 from case for 10 s) (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the NTR4003NT3G SOT23 10,000 / Tape & device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. NVR4003NT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: June, 2019 Rev. 5 NTR4003N/DNTR4003N, NVR4003N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 180 C/W JA JunctiontoAmbient t < 10 s (Note 1) R 150 JA JunctiontoAmbient Steady State (Note 2) R 300 JA 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 2. Surfacemounted on FR4 board using the minimum recommended pad size. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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