NTR4501N, NVR4501N MOSFET Power, Single, N-Channel, SOT-23 20 V, 3.2 A Features www.onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching V R Typ I Max 2.5 V Rated for Low Voltage Gate Drive (BR)DSS DS(on) D (Note 1) SOT23 Surface Mount for Small Footprint 70 m 4.5 V 3.6 A NVR Prefix for Automotive and Other Applications Requiring 20 V Unique Site and Control Change Requirements AECQ101 88 m 2.5 V 3.1 A Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant NChannel D Applications Load/Power Switch for Portables Load/Power Switch for Computing DCDC Conversion G MAXIMUM RATINGS (T = 25C unless otherwise stated) J S Parameter Symbol Value Unit MARKING DIAGRAM & DraintoSource Voltage V 20 V DSS PIN ASSIGNMENT 3 GatetoSource Voltage V 12 V GS Drain Continuous Drain Steady T = 25C I 3.2 A A D 3 Current (Note 1) State 1 T = 85C 2.4 A A xR1 M 2 Steady State Power Steady State P 1.25 W D SOT23 Dissipation (Note 1) CASE 318 2 1 STYLE 21 Gate Source Pulsed Drain Current t = 10 s I 10.0 A p DM Operating Junction and Storage Temperature T , 55 to C J TR1 = Device Code for NTR4501N T 150 stg VR1 = Device Code for NVR4501N M = Date Code* Continuous Source Current (Body Diode) I 1.6 A S = PbFree Package Lead Temperature for Soldering Purposes T 260 C L (Note: Microdot may be in either location) (1/8 from case for 10 s) *Date Code orientation and/or overbar may vary depending upon manufacturing location. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit C/W JunctiontoAmbient (Note 1) R 100 ORDERING INFORMATION JA JunctiontoAmbient (Note 2) R 300 JA Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the NTR4501NT1G SOT23 3000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). NVR4501NT1G SOT23 3000 / Tape & Reel 2. Surfacemounted on FR4 board using the minimum recommended pad size. (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2019 Rev. 15 NTR4501N/DNTR4501N, NVR4501N Electrical Characteristics (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V V = 0 V, I = 250 A 20 24.5 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 22 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 1.5 A DSS GS J V = 16 V T = 85C 10 A DS J GatetoSource Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS ON CHARACTERISTICS Gate Threshold Voltage (Note 3) V V = V , I = 250 A 0.65 1.2 V GS(TH) GS DS D Negative Threshold V /T 2.3 mV/C GS(TH) J Temperature Coefficient DraintoSource On Resistance V = 4.5 V, I = 3.6 A 70 80 GS D R m DS(on) V = 2.5 V, I = 3.1 A 88 105 GS D Forward Transconductance g V = 5.0 V, I = 3.6 A 9 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 200 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 80 pF oss V = 10 V DS Reverse Transfer Capacitance C 50 rss Total Gate Charge Q 2.4 6.0 G(TOT) V = 4.5 V, V = 10 V, GS DS GatetoSource Gate Charge Q 0.5 nC GS I = 3.6 A D GatetoDrain Charge Q 0.6 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 6.5 13 d(on) Rise Time t 12 24 r V = 4.5 V, V = 10 V, GS DS ns I = 3.6 A, R = 6.0 D G TurnOff Delay Time t 12 24 d(off) Fall Time t 3 6 f SOURCEDRAIN DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 1.6 A 0.8 1.2 V SD GS SD Reverse Recovery Time t 7.1 RR V = 0 V, Charge Time t GS 5 ns a d /d = 100 A/ s, IS t Discharge Time t 1.9 I = 1.6 A b S Reverse Recovery Charge Q 3.0 nC RR 3. Pulse Test: Pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2