NTR4101P, NTRV4101P MOSFET Power, Single P-Channel, Trench, SOT-23 -20 V Features wwwwww..onsemi.comonsemi.com Leading 20 V Trench for Low R DS(on) 1.8 V Rated for Low Voltage Gate Drive SOT23 Surface Mount for Small Footprint V R TYP I MAX (BR)DSS DS(ON) D NTRV Prefix for Automotive and Other Applications Requiring 70 m 4.5 V Unique Site and Control Change Requirements AECQ101 20 V 90 m 2.5 V 3.2 A Qualified and PPAP Capable 112 m 1.8 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant PChannel MOSFET Applications S Load/Power Management for Portables Load/Power Management for Computing Charging Circuits and Battery Protection G MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS D GatetoSource Voltage V 8.0 V GS MARKING DIAGRAM & Continuous Drain Steady T = 25C I 2.4 A A D PIN ASSIGNMENT Current (Note 1) State T = 85C 1.7 A 3 t 10 s T = 25C 3.2 A 3 Drain Power Dissipation Steady T = 25C P 0.73 W A D (Note 1) State 1 TR4 M t 10 s 1.25 2 Continuous Drain Steady T = 25C I 1.8 A A D SOT23 Current (Note 2) State CASE 318 T = 85C 1.3 1 2 A STYLE 21 Gate Source Power Dissipation T = 25C P 0.42 W A D (Note 2) TR4 = Device Code Pulsed Drain Current tp = 10 s I 18 A DM M = Date Code = PbFree Package ESD Capability (Note 3) C = 100 pF, ESD 225 V RS = 1500 (Note: Microdot may be in either location) Operating Junction and Storage Temperature T , 55 to C J 150 T STG ORDERING INFORMATION Source Current (Body Diode) I 2.4 A S Device Package Shipping Single Pulse DraintoSource Avalanche EAS 16 mJ Energy (V = 8 V, I = 1.8 Apk, L = 10 mH, GS L NTR4101PT1G SOT23 3000 / Tape & R = 25 ) G (PbFree) Reel NTRV4101PT1G Lead Temperature for Soldering T 260 C L Purposes (1/8 from case for 10 s) For information on tape and reel specifications, including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specifications device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 12 NTR4101P/DNTR4101P, NTRV4101P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 170 C/W JA JunctiontoAmbient t < 10 s (Note 1) 100 R JA JunctiontoAmbient Steady State (Note 2) R 300 JA 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces) 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 4) V 20 V (BR)DSS (V = 0 V, I = 250 A) GS D Zero Gate Voltage Drain Current (Note 4) I 1.0 A DSS (V = 0 V, V = 16 V) GS DS GatetoSource Leakage Current I 100 nA GSS (V = 8.0 V, V = 0 V) GS DS ON CHARACTERISTICS Gate Threshold Voltage (Note 4) V 0.4 0.72 1.2 V GS(th) (V = V , I = 250 A) GS DS D DraintoSource OnResistance R m DS(on) (V = 4.5 V, I = 1.6 A) 70 85 GS D (V = 2.5 V, I = 1.3 A) 90 120 GS D (V = 1.8 V, I = 0.9 A) 112 210 GS D Forward Transconductance (V = 5.0 V, I = 2.3 A) g 7.5 S DS D FS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 675 pF iss Output Capacitance C 100 (V = 0 V, f = 1 MHz, V = 10 V) GS DS oss Reverse Transfer Capacitance C 75 rss Total Gate Charge (V = 4.5 V, V = 10 V, I = 1.6 A) Q 7.5 8.5 nC GS DS D G(tot) GatetoSource Gate Charge (V = 10 V, I = 1.6 A) Q 1.2 nC DS D GS GatetoDrain Miller Charge (V = 10 V, I = 1.6 A) Q 2.2 nC DS D GD Gate Resistance R 6.5 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 7.5 ns d(on) Rise Time t 12.6 r (V = 4.5 V, V = 10 V, GS DS I = 1.6 A, R = 6.0 ) D G TurnOff Delay Time t 30.2 d(off) Fall Time t 21.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage (V = 0 V, I = 2.4 A) V 0.82 1.2 V GS S SD Reverse Recovery Time t 12.8 15 ns rr (V = 0 V, GS Charge Time t 9.9 ns a dI /dt = 100 A/ s, I = 1.6 A) SD S Discharge Time t 3.0 ns b Reverse Recovery Charge Q 1008 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2