NTR4170NT1G ON Semiconductor

NTR4170NT1G electronic component of ON Semiconductor
NTR4170NT1G ON Semiconductor
NTR4170NT1G MOSFETs
NTR4170NT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTR4170NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTR4170NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NTR4170NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SOT23 30V 4A TR
Datasheet: NTR4170NT1G Datasheet (PDF)
Price (USD)
6000: USD 0.0472 ea
Line Total: USD 283.2 
Availability : 299730
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
6000$ 0.0472

Availability 72750
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1128
6000$ 0.1097
9000$ 0.1062
12000$ 0.1057
27000$ 0.1051
51000$ 0.1045
102000$ 0.104
150000$ 0.1035


Availability 5601
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2274
50$ 0.178
150$ 0.1149
500$ 0.091
3000$ 0.0809
6000$ 0.0759


Availability 2425
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.518
5$ 0.3892
10$ 0.3304
50$ 0.2268
100$ 0.1988


Availability 17460
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.113
6000$ 0.1075
9000$ 0.1066
15000$ 0.076


Availability 11155
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1035
Multiples : 1
QtyUnit Price
1035$ 0.2513
1627$ 0.1599
1693$ 0.1537
1775$ 0.1465
1875$ 0.1387
3000$ 0.0931
6000$ 0.0801


Availability 72750
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1326
6000$ 0.1291
9000$ 0.1249
12000$ 0.1242
27000$ 0.1236


Availability 299730
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0472

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the NTR4170NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTR4170NT1G and other electronic components in the MOSFETs category and beyond.

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NTR4170N MOSFET Power, Single, N-Channel, SOT-23 30 V, 3.1 A Features www.onsemi.com Low R DS(on) Low Gate Charge V R MAX I MAX (BR)DSS DS(on) D Low Threshold Voltage 3.1 A 55 m 10 V Halide Free This is a PbFree Device 30 V 70 m 4.5 V 2.8 A Applications 110 m 2.5 V 2.0 A Power Converters for Portables Battery Management SIMPLIFIED SCHEMATIC NCHANNEL Load/Power Switch D MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G GatetoSource Voltage V 12 V GS Continuous Drain Steady 2.4 S Current (Note 1) State T = 25C A t 30 s 3.1 MARKING DIAGRAM/ PIN ASSIGNMENT t 10 s 3.9 I A D 3 3 Steady 1.7 Drain State T = 85C 1 A t 30 s 2.3 TREM 2 t 10 s 2.8 SOT23 Power Dissipation Steady 0.48 CASE 318 1 P W D (Note 1) State STYLE 21 1 2 Gate Source T = 25C A t 30 s 0.82 TRE = Specific Device Code t 10 s P 1.25 D M = Date Code Pulsed Drain Current t =10 s I 8.0 A = PbFree Package p DM (Note: Microdot may be in either location) Operating Junction and Storage Temperature T , 55 to J C T 150 stg Source Current (Body Diode) I 0.82 A ORDERING INFORMATION S Lead Temperature for Soldering Purposes 260 Device Package Shipping T C L (1/8 from case for 10 s) NTR4170NT1G SOT23 3000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NTR4170NT3G SOT23 10000/Tape & Reel THERMAL RESISTANCE RATINGS (PbFree) Parameter Symbol Max Unit For information on tape and reel specifications, including part orientation and tape sizes, please JunctiontoAmbient Steady State (Note 1) R 260 C/W JA refer to our Tape and Reel Packaging Specification JunctiontoAmbient t 30 s R 153 Brochure, BRD8011/D. JA JunctiontoAmbient t < 10 s (Note 1) 100 R JA Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: June, 2019 Rev. 2 NTR4170N/DNTR4170N 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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