Product Information

NTR4170NT1G

NTR4170NT1G electronic component of ON Semiconductor

Datasheet
MOSFET NFET SOT23 30V 4A TR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0868 ea
Line Total: USD 260.4

119310 - Global Stock
Ships to you between
Thu. 25 Apr to Wed. 01 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2425 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 1
Multiples : 1

Stock Image

NTR4170NT1G
ON Semiconductor

1 : USD 0.2187
10 : USD 0.2166
25 : USD 0.2055
100 : USD 0.1124
250 : USD 0.1101
500 : USD 0.1101
1000 : USD 0.1101

6174 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 5
Multiples : 1

Stock Image

NTR4170NT1G
ON Semiconductor

5 : USD 0.7952
10 : USD 0.5864
100 : USD 0.3309
500 : USD 0.3243

119310 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 3000
Multiples : 3000

Stock Image

NTR4170NT1G
ON Semiconductor

3000 : USD 0.0868

1712 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 5
Multiples : 5

Stock Image

NTR4170NT1G
ON Semiconductor

5 : USD 0.2293
50 : USD 0.1825
150 : USD 0.1625
500 : USD 0.1376
3000 : USD 0.1264
6000 : USD 0.1198

198 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 5
Multiples : 5

Stock Image

NTR4170NT1G
ON Semiconductor

5 : USD 0.2366
25 : USD 0.2106
100 : USD 0.1677
270 : USD 0.1586
3000 : USD 0.1573

2425 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 66
Multiples : 1

Stock Image

NTR4170NT1G
ON Semiconductor

66 : USD 0.2055
100 : USD 0.1124
250 : USD 0.1101

17460 - Global Stock


Ships to you between Thu. 25 Apr to Wed. 01 May

MOQ : 3000
Multiples : 3000

Stock Image

NTR4170NT1G
ON Semiconductor

3000 : USD 0.1302

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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NTR4170N MOSFET Power, Single, N-Channel, SOT-23 30 V, 3.1 A Features www.onsemi.com Low R DS(on) Low Gate Charge V R MAX I MAX (BR)DSS DS(on) D Low Threshold Voltage 3.1 A 55 m 10 V Halide Free This is a PbFree Device 30 V 70 m 4.5 V 2.8 A Applications 110 m 2.5 V 2.0 A Power Converters for Portables Battery Management SIMPLIFIED SCHEMATIC NCHANNEL Load/Power Switch D MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G GatetoSource Voltage V 12 V GS Continuous Drain Steady 2.4 S Current (Note 1) State T = 25C A t 30 s 3.1 MARKING DIAGRAM/ PIN ASSIGNMENT t 10 s 3.9 I A D 3 3 Steady 1.7 Drain State T = 85C 1 A t 30 s 2.3 TREM 2 t 10 s 2.8 SOT23 Power Dissipation Steady 0.48 CASE 318 1 P W D (Note 1) State STYLE 21 1 2 Gate Source T = 25C A t 30 s 0.82 TRE = Specific Device Code t 10 s P 1.25 D M = Date Code Pulsed Drain Current t =10 s I 8.0 A = PbFree Package p DM (Note: Microdot may be in either location) Operating Junction and Storage Temperature T , 55 to J C T 150 stg Source Current (Body Diode) I 0.82 A ORDERING INFORMATION S Lead Temperature for Soldering Purposes 260 Device Package Shipping T C L (1/8 from case for 10 s) NTR4170NT1G SOT23 3000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NTR4170NT3G SOT23 10000/Tape & Reel THERMAL RESISTANCE RATINGS (PbFree) Parameter Symbol Max Unit For information on tape and reel specifications, including part orientation and tape sizes, please JunctiontoAmbient Steady State (Note 1) R 260 C/W JA refer to our Tape and Reel Packaging Specification JunctiontoAmbient t 30 s R 153 Brochure, BRD8011/D. JA JunctiontoAmbient t < 10 s (Note 1) 100 R JA Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: June, 2019 Rev. 2 NTR4170N/DNTR4170N 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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