X-On Electronics has gained recognition as a prominent supplier of DB4X314K0R schottky diodes & rectifiers across the USA, India, Europe, Australia, and various other global locations. DB4X314K0R schottky diodes & rectifiers are a product manufactured by Panasonic. We provide cost-effective solutions for schottky diodes & rectifiers, ensuring timely deliveries around the world.

DB4X314K0R Panasonic

DB4X314K0R electronic component of Panasonic
Images are for reference only
See Product Specifications
Part No.DB4X314K0R
Manufacturer: Panasonic
Category:Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SCHOTTKY BARRIER GL WNG 2.9x2.8mm
Datasheet: DB4X314K0R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.0836
10 : USD 0.5237
100 : USD 0.1509
500 : USD 0.1203
1000 : USD 0.0958
3000 : USD 0.0791
9000 : USD 0.0735
24000 : USD 0.0702
45000 : USD 0.0669
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Recovery Time
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the DB4X314K0R from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DB4X314K0R and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

DB4X314K Silicon epitaxial planar type For high speed switching circuits Unit: mm Features Short reverse recovery time t rr Small reverse current I R Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 4X Basic Part Number Dual DB2J314 (Parallel) Packaging DB4X314K0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a 1: Anode-1 3: Cathode-2 Parameter Symbol Rating Unit 2: Anode-2 4: Cathode-1 Reverse voltage V 30 V R Panasonic Mini4-G4-B Maximum peak reverse voltage V 30 V RM JEITA SC-61AB Single 30 Code TO-253/SOT-143 Forward current I mA F 1 * Double 20 Single 150 4 3 Peak forward current I mA FM 1 * Double 110 Junction temperature T 125 C j Operating ambient temperature T 40 to +85 C opr 1 2 Storage temperature T 55 to +125 C stg Note) 1: Value of each diode in double diodes used. * Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit V I = 1 mA 0.40 F1 F Forward voltage V V I = 30 mA 1.0 F2 F Reverse current I V = 30 V 300 nA R R Terminal capacitance C V = 10 V, f = 1 MHz 1.5 pF t R 1 * Reverse recovery time t I = I =10 mA, I = 1 mA, R = 100 1.0 ns rr F R rr L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz 4. 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 1 mA rr t = 2 s I = 10 mA p F t = 0.35 ns I = 10 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Publication date: April 2013 Ver. DED 1DB4X314K DB4X314K I -V DB4X314K I -V DB4X314K Ct-VR F F R R I V I V C V F F R R t R 1 10 5.0 T = 125C a Pulse test T = 25C 5 a 10 85C 4.0 2 T = 125C 10 a 3.0 25C 7 10 3 10 2.0 85C 9 10 4 10 40C 25C 1.0 40C 5 11 10 10 0 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 0 10 20 30 Reverse voltage V (V) Forward voltage V (V) Reverse voltage V (V) R F R Ver. DED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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