Product Information

DB5H411K0L

DB5H411K0L electronic component of Panasonic

Datasheet
Schottky Diodes & Rectifiers 40V 1A WSMini5-F1-B 2.0x2.1mm Flat lead

Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 3000
Multiples : 3000

Stock Image

DB5H411K0L
Panasonic

3000 : USD 0.2872
9000 : USD 0.2872
24000 : USD 0.2772
45000 : USD 0.2696
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Recovery Time
Forward Voltage Drop
Maximum Diode Capacitance
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Doc No. TT4-EA-13100 Revision .2 Product Standards Schottky Barrier Diode DB5H411K0L DB5H411K0L Silicon epitaxial planar type Unit: mm For high frequency rectification 2.0 DB2J411 in WSMini5 type package 0.2 0.13 5 4 Features Low forward voltage and low reverse leakage current Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 3 0.7 Marking Symbol: 3F (0.65)(0.65) 1.3 Basic Part Number : Dual DB2J411 (Parallel) 1. Anode1 4. Cathode2 Packaging 2. N.C. 5. Cathode1 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 3. Anode2 Panasonic WSMini5-F1-B JEITA SC-113CA Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 40 V Internal Connection Single 1A Forward current (Average) IF(AV) 54 Double 0.75 A Non-repetitive peak Single 3 A IFM *1 Double 2.25 A forward surge current Junction temperature Tj 125 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +125 C 12 3 Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page 1of 4 Established: 2011 -03-23 Revised: 2013-04-26 1.7 2.1Doc No. TT4-EA-13100 Revision . 2 Product Standards Schottky Barrier Diode DB5H411K0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 1 A 0.50 0.58 V Reverse current A IR VR = 40 V 15 100 Terminal capacitance Ct VR = 10 V, f = 1 MHz 21 pF *1 trr IF = IR = 100 mA, Irr = 10 mA 6.8 ns Reverse recovery time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2 of 4 Established : 2011-03-23 Revised : 2013-04-26

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aromat
PA4
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