DB5S308K0R

DB5S308K Silicon epitaxial planar type For high speed switching circuits Unit: mm Features Short reverse recovery time t rr Low forward voltage V F Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 3A Basic Part Number Dual DB2S308 (Parallel) Packaging DB5S308K0R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Reverse voltage V 30 V R 1: Anode-1 4: Cathode-2 2: N.C. 5: Cathode-1 Repetitive peak reverse voltage V 30 V RRM 3: Anode-2 Single 100 mA Forward current (Average) I Panasonic SSMini5-F4-B F(AV) 1 * Double 75 mA JEITA SC-107BB Single 300 mA Code SOT-665 Peak forward current I FM 1 * Double 225 mA Single 1 A Non-repetitive peak forward 5 4 I FSM 2 * 1 * surge current Double 0.75 A Junction temperature T 125 C j Operating ambient temperature T 40 to +85 C opr 1 2 3 Storage temperature T 55 to +125 C stg Note) 1: Value of each diode in double diodes used. * 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) * Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit V I = 10 mA 0.29 F1 F Forward voltage V V I = 100 mA 0.42 F2 F I V = 10 V 25 R1 R Reverse current A I V = 30 V 120 R2 R Terminal capacitance C V = 10 V, f = 1 MHz 2.9 pF t R 1 * Reverse recovery time t I = I = 100 mA, I = 10 mA R = 100 1.3 ns rr F R rr , L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz 4. 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Publication date: April 2013 Ver. EED 1DB5S308K DB5S308K I -V DB5S308K I -V DB5S308K Ct-VR F F R R I V I V C V F F R R t R 2 1 10 16 T = 125C Pulse test a T = 25C a 100C 3 10 80C 1 10 12 4 T = 125C 10 a 25C 2 10 5 10 8 100C 6 3 10 10 40C 85C 7 10 4 25C 4 10 8 10 40C 5 9 10 10 0 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 30 35 0 10 20 30 Reverse voltage V (V) Forward voltage V (V) Reverse voltage V (V) R F R Ver. EED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t