The RMD070N10S is a DFN5x6-8 MOSFET manufactured by Reactor-Micro designed to reduce power losses in electronic circuits and is compliant with the EU RoHS directive 2002/95/EC. The device is constructed with an N-Channel enhancement mode MOSFET featuring excellent switching characteristics, low on-resistance, and low gate threshold voltage. The RMD070N10S has a maximum forward voltage drop of only 0.6V, high input impedance, wide operating temperature range, and low gate charge to speed up the switching operation. This device allows for use in high temperature applications and offers superior performance and reliable operation in a highly space efficient package.