X-On Electronics has gained recognition as a prominent supplier of RFNL10TJ6SGC9 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFNL10TJ6SGC9 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFNL10TJ6SGC9 ROHM

RFNL10TJ6SGC9 electronic component of ROHM
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Part No.RFNL10TJ6SGC9
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V Vrm 10A Io Recovery Diode
Datasheet: RFNL10TJ6SGC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0063 ea
Line Total: USD 2.01 
Availability - 1489
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1489
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 2.0063
10 : USD 1.114
100 : USD 1.0256
500 : USD 0.8586
1000 : USD 0.8572
2000 : USD 0.7941
5000 : USD 0.7829

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the RFNL10TJ6SGC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFNL10TJ6SGC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFNL10TJ6S Data Sheet lSerise lDimensions (Unit : mm) lStructure 4.50.1 f3.10.1 Standard Fast Recovery 10.20.2 2.60.1 lApplication General rectification For PFC Anode Cathode RFNL10 (DCM : Discontinuous Current Mode) TJ6S 1 2 lFeatures 2.60.1 1) Ultra low forward voltage 1.40.2 2) Low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.830.1 lConstruction 5.080.1 Silicon epitaxial planar type ROHM : TO-220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 600 V RM V Direct reverse voltage 600 Reverse voltage V R I 60Hz half sin wave , resistive load Average current 10 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 120 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C j 0.85 1.05 1.25 V I =8A F T =125C j - 0.9 - V Forward voltage V F T =25C j 0.9 1.1 1.3 V I =10A F T =125C j - 0.95 - V T =25C - 0.03 10 mA j I V =600V Reverse current R R T =125C - 3 200 j mA I =0.5A, I =1A, Irr=0.25I - 45 65 ns F R R Reverse recovery time trr I =10A, V =400V, dI /dt=-100A/ ms - 100 150 ns F R F I =10A, dI /dt=100A/ ms, Forward recovery time tfr - 180 - ns F F V V =1.1xV Forward recovery voltage - 3.3 - V Fp FR Fmax R (j-a) Junction to ambient - - 8.0 C/W th Thermal resistance R (j-c) Junction to case - - 3.2 C/W th www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 1/5 3 16.00.1 9.560.2 3.950.1 13.51 28.560.2 9.050.1 6 15.050.1 Data Sheet RFNL10TJ6S lElectrical Characteristic Curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j T = 150 C j 1 100 T = 25 C j T = 125 C j 10 T = 75 C j 0.1 1 T = 25 C j 0.01 0.1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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