RFU5TF6S ROHM

Data Sheet Super Fast Recovery Diode RFU5TF6S Series Dimensions(Unit : mm) Structure Ultra Fast Recovery +0.3 +0.3 0.1 0.1 +0.2 0.1 Applications (1) (3) General rectification Features 1)Single type.(TO-220) 2)Ultra high switching speed Construction Silicon epitaxial planer +0.1 0.05 Absolute maximum ratings(Tc=25 C) Parameter Conditions Limits Unit Symbol Repetitive peak reverse voltage V Duty0.5 600 V RM Reverse voltage V Direct voltage 600 V R Tc=93 C Average rectified forward current Io 60Hz half sin wave, Resistance load, 5.0 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 60 A FSM one cycle peak value, Tj=25C Junction temperature 150 C Tj Storage temperature 55 to 150 C Tstg Electrical characteristics(Tj=25 C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =5.0A - 2.2 2.8 Forward voltage V F F V =600V Reverse current I - 0.02 10 A R R Reverse recovery time (*) I =0.5A,I =1A,Irr=0.25I -15 25 trr F R R ns -- 4 Thermal resistance(*) Rth(j-c) junction to case C/W (*) : Design assurance without measurement. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A +0.4 0.2Data Sheet RFU5TF6S Electrical characteristic curves 100 100000 1000 Tj=150 C Tj=125 C f=1MHz 10000 Tj=25 C Tj=125 C 10 Tj=150 C 1000 Tj=75C 100 Tj=25 C 100 1 Tj=75C Tj=25 C 10 1 0.1 10 0 50 100 150 200 250 300 350 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) F R R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R R 150 100 2500 Ta=25C T =25 C T =25 C f=1MHz 140 I =5A V =600V F R V =0V R 2400 n=20pcs n=20pcs n=10pcs 130 2300 AVE : 133.8pF AVE : 2132mV 10 AVE : 28.0nA 120 2200 110 2100 100 1 2000 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 1000 30 200 T=25C I =0.5A I 1cyc 25 F FSM I =1A R 150 Irr=0.25I R 8.3ms 100 20 n=10pcs 15 100 AVE : 14.3ns 10 10 AVE : 93.0A I FSM 50 5 8.3ms 8.3ms 1cyc. 0 1 0 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP I DISRESION MAP FSM I -CYCLE CHARACTERISTICS FSM 5 10 1000 4.5 4 Rth(j-c) 3.5 I FSM time 3 2.5 100 1 AVE : 2.73kV 2 1.5 1 0.5 AVE : 1.14kV 0 10 0.1 C=200pF C=100pF 1 10 100 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME : t(ms) TIME : t(s) I -t CHARACTERISTICS ESD DISPERSION MAP FSM Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A ITS ABILITY OF PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : I (A) F F FSM ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN TERMINALS : PEAK SURGE TRANSIENT CAPACITANCE BETWEEN TERMINALS : Ct(pF) THAERMAL IMPEDANCE : Rth ( C/W) FORWARD CURRENT : I (A) Ct(pF) FSM