RFU20TM5S ROHM

Data Sheet Super Fast Recovery Diode RFU20TM5S Series Dimensions(Unit : mm) Structure Ultra Fast Recovery Applications (1) (2) (3) General rectification Features 1)Cathode common Single type.(TO-220) 2)Ultra high switching speed (1) (2) (3) Construction Silicon epitaxial planer Absolute maximum ratings(Tc=25C) Parameter Conditions Limits Unit Symbol Repetitive peak reverse voltage 530 V V Duty0.5 RM Direct voltage Reverse voltage V 530 V R 60Hz half sin wave, Resistance load, Average rectified forward current Io Tc=95C 20 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25C Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical characteristics(Tj=25 C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =20A - 1.65 2 Forward voltage V F F Reverse current I V =530V - 0.05 10 A R R Reverse recovery time trr I =0.5A,I =1A,Irr=0.25I -23 30 ns F R R - - 1.8 Thermal Resistance Rth(j-c) junction to case C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3 Not Recommended for New DesignsData Sheet RFU20TM5S Electrical characteristic curves 100 100000 1000 Tj=150C f=1MHz Tj=150 C 10000 Tj=25 C 10 Tj=125 C Tj=125 C 1000 100 Tj=25 C 100 1 10 Tj=25 C 0.1 1 10 0 5 00 1000 150 0 20 00 2 500 3000 0 5 10 15 20 25 30 0 1 00 200 30 0 400 500 6 00 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS R F F R R 1800 100 450 T =25 C T =25 C T=25 C I =20A V =530V 430 f=1MHz F R 1700 n=20pcs AVE : 64.0nA n=20pcs V =0V R n=10pcs 410 AVE : 419pF 10 1600 390 1500 AVE : 1567mV 370 1 350 1400 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 300 40 1000 I 1cyc FSM T=25 C 35 I =0.5A F 250 I =1A R 8.3ms 30 Irr=0.25*I R n=10pcs 200 25 AVE : 231.0A 100 20 I AVE : 22.7ns FSM 150 8.3ms 8.3ms 15 1cyc 10 100 10 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP I DISRESION MAP FSM I -CYCLE CHARACTERISTICS FSM 1000 100 5 I =1A F IM=100mA I 4 FSM t 1ms time Rth(j-a) 10 3 300us 100 2 AVE : 0.9kV AVE : 2.32kV Rth(j-c) 1 1 0 10 C=200pF C=100pF 0.1 R=0 R=1.5k 1 10 100 0.001 0.01 0.1 1 10 100 1000 TIME : t(ms) TIME : t(s) I -t CHARACTERISTICS ESD DISPERSION MAP Rth-t CHARACTERISTICS FSM www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : I (A) F F FSM ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) REVERSE RECOVERY TIME : trr(ns) R DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE TRANSIENT TERMINALS : Ct(pF) TERMINALS : Ct(pF) THAERMAL IMPEDANCE : Rth ( C/W) FORWARD CURRENT : I (A) FSM