Product Information

RFNL5BGE6STL

RFNL5BGE6STL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V Vrm; 5A Io TO-252 Rec Diode
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9326 ea
Line Total: USD 0.93

1386 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1386 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.9326
10 : USD 0.8056
100 : USD 0.5719
500 : USD 0.4912
1000 : USD 0.4295
2500 : USD 0.3868
5000 : USD 0.3785
10000 : USD 0.3666
25000 : USD 0.3631

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFNL5BGE6S Datasheet Series Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 General rectification for PFC (Discontinuous Current Mode) TO-252 2.3 2.3 Features Structure Cathode ROHM : TO-252GE 1) Ultra low forward voltage JEITA : - Manufacture Date 2) High current overload capacity Open Anode Taping specifications (Unit : mm) Construction Silicon epitaxial planar type Absolute maximum ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R I 60Hz half sin wave , Resistive load T = 97C 5 Average current c A o 60Hz half sin wave ,Non-repetitive at T=25C Non-repetitive forward surge current I 50 j A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =5A Forward voltage V 0.9 1.1 1.3 V F F I V =600V Reverse current -0.02 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 38 60 ns F R R R Thermal resistance Junction to case -- 6.0 C / W th(j-c) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2018.05 - Rev.D 1/4 3.0 2.0 6.0Datasheet RFNL5BGE6S Electrical characteristic curves 100 100000 T = 150 C j T = 125 C j 10000 T = 125 C j 1000 10 T = 75 C j T = 150 C j 100 T = 25 C j T = 75 C j 1 10 1 T = 25 C j 0.1 0.1 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 10 I FSM 8.3ms 8.3ms 1cyc. 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2018.05 - Rev.D 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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