Product Information

SW12N65

Name: SW12N65
Brand: Sam&wing
SKU: SW12N65_Samwing
Availability: OutOfStock
Rating: 5 (11 reviews)

SW12N65 electronic component of Sam&wing

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Datasheet

MOSFET N Trench 650V 12A (Tc) 4.5V @ 250uA 800 mÎ© @ 6A,10V TO-220F RoHS

Manufacturer: Sam&wing

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.8474 ea
Line Total: USD 0.85

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Wed. 29 May MOQ : 1 Multiples : 1 SW12N65 Sam&wing	1 : USD 0.8474 10 : USD 0.7109 50 : USD 0.6415 100 : USD 0.5746 500 : USD 0.4429 1000 : USD 0.4214

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Additional Infomation About Product

The Sam&wing SW12N65 is a MOSFET N Trench with 650V of breakdown voltage and 12A (Tc) of continuous drain current. It has a maximum gate threshold voltage of 4.5V and a maximum internal gate source resistance of 800mO at 6A, 10V. This device is manufactured in a TO-220F package with RoHS compliant lead material. It also has a 250uA maximum gate charge for fast and efficient switching.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Sam&Wing may also be referenced as

Sam&wing
Samwin

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Manufacturer Sam&wing Sam&wing
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 220F TO - 220F
Brand Category Samwing Samwing
Fet Type n trench n trench
Drain To Source Voltagevdss 650 V 650 V
Continuous Drain Current Id @ 25°C 12 A (t C) 12 A (t C)
Vgsth Max @ Id 4.5 V @ 250ua 4.5 V @ 250ua
Rds On Max @ Id Vgs 800 m @ 6a,10v 800 m @ 6a,10v
Power Dissipation Max 44.6 W 44.6 W
Drain Source Voltage Vdss 650 V 650 V
Continuous Drain Current Id 12 A 12 A
Drain Source On Resistance Rdson@Vgs Id 800 mOhms @10V , 6A 800 mOhms @10V , 6A
Power Dissipation Pd 44.6 W 44.6 W
Gate Threshold Voltage Vgsth@Id 4.5 V @250uA 4.5 V @250uA
Type N Channel N Channel