STFU15N80K5 Datasheet N-channel 800 V, 300 m typ., 14 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package Features V R max. I Order code DS DS(on ) D STFU15N80K5 800 V 375 m 14 A Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 2 1 Ultra-low gate charge TO-220FP 100% avalanche tested ultra narrow leads Zener-protected D(2) Applications G(1) Switching applications Description S(3) AM15572v1 no tab This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STFU15N80K5 Product summary Order code STFU15N80K5 Marking 15N80K5 TO-220FP ultra narrow Package leads Packing Tube DS10950 - Rev 3 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.STFU15N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 14 A D C (1) Drain current (continuous) at T = 100 C I 8.8 A D C (2) I Drain current (pulsed) 56 A DM P Total power dissipation at T = 25 C 35 W TOT C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 V 2500 V ISO s T =25 C) C (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Storage temperature range stg - 55 to 150 C T Operating junction temperature range J 1. Limited by package. 2. Pulse width limited by safe operating area. 3. I 14 A, di/dt = 100 A/s V (peak) < V SD DS (BR)DSS. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 4.17 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 150 mJ AS j D AR DD DS10950 - Rev 3 page 2/13